XC7SHU04GV,125 NXP Semiconductors, XC7SHU04GV,125 Datasheet
XC7SHU04GV,125
Specifications of XC7SHU04GV,125
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XC7SHU04GV,125 Summary of contents
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XC7SHU04 Inverter Rev. 01 — 7 September 2009 1. General description The XC7SHU04 is a high-speed Si-gate CMOS device. It provides an inverting single stage function. 2. Features I Symmetrical output impedance I High noise immunity I Low power dissipation ...
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... NXP Semiconductors 4. Marking Table 2. Marking codes Type number XC7SHU04GW XC7SHU04GV [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 5. Functional diagram mna043 Fig 1. Logic symbol 6. Pinning information 6.1 Pinning Fig 4. Pin configuration SOT353-1 and SOT753 6 ...
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... NXP Semiconductors 7. Functional description Table 4. Function table H = HIGH voltage level LOW voltage level Input Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter V supply voltage CC I input clamping current IK V input voltage I I output clamping current ...
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... NXP Semiconductors 10. Static characteristics Table 7. Static characteristics Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions V HIGH-level input voltage LOW-level input voltage HIGH-level output voltage 4.0 mA 8.0 mA LOW-level output voltage 4.0 mA 8.0 mA input leakage GND current ...
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... NXP Semiconductors 11. Dynamic characteristics Table 8. Dynamic characteristics GND = 0 V. For test circuit see Figure Symbol Parameter Conditions t propagation see pd delay power per buffer; PD dissipation V = GND capacitance [ the same as t and PLH PHL [2] Typical values are measured at V [3] Typical values are measured at V ...
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... NXP Semiconductors 12. Waveforms Measurement points are given in Fig 5. Input (A) to output (Y) propagation delays Table 9. Measurement point Type Input V I XC7SHU04 GND to V Test data is given in Table 10. Definitions for test circuit Load capacitance including jig and probe capacitance Termination resistance should be equal to output impedance Z T Fig 6 ...
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... NXP Semiconductors 13. Typical transfer characteristics 2 (V) 1.6 1.2 0.8 0.4 0 0.4 0.8 1.2 0 Fig 2 ( Fig 5 XC7SHU04_1 Product data sheet mna397 1 (mA) (V) 0.8 0.6 0.4 0.2 I (drain current 1.6 2.0 V (V) I Fig 8. mna399 (mA (drain current (V) I Fig 10. Test set-up for measuring forward Rev. 01 — ...
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... NXP Semiconductors Fig 11. Typical forward transconductance g 14. Application information Some applications are: • Linear amplifier (see • In crystal oscillator design (see Remark: All values given are typical unless otherwise specified U04 Maximum 1.5 V centered at 0.5 o(p- – --------------------------------------- ------ - ...
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... NXP Semiconductors Table 11. External components for resonator (f < 1 MHz) All values given are typical and must be used as an initial set-up. Frequency 10 kHz to 15.9 kHz 16 kHz to 24.9 kHz 25 kHz to 54.9 kHz 55 kHz to 129.9 kHz 130 kHz to 199.9 kHz 200 kHz to 349.9 kHz 350 kHz to 600 kHz Table 12 ...
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... NXP Semiconductors 15. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. 0.1 1.0 mm 1.1 0.15 0 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION IEC SOT353-1 Fig 14 ...
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... NXP Semiconductors Plastic surface-mounted package; 5 leads DIMENSIONS (mm are the original dimensions UNIT 0.100 0.40 1.1 0.26 mm 0.013 0.25 0.9 0.10 OUTLINE VERSION IEC SOT753 Fig 15. Package outline SOT753 (SC-74A) XC7SHU04_1 Product data sheet scale 3.1 1.7 3.0 0.6 0.95 2.7 1.3 2 ...
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... NXP Semiconductors 16. Abbreviations Table 13. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 17. Revision history Table 14. Revision history Document ID Release date XC7SHU04_1 20090907 XC7SHU04_1 Product data sheet Data sheet status ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 1 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 6.1 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6.2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 Functional description . . . . . . . . . . . . . . . . . . . 3 8 Limiting values Recommended operating conditions Static characteristics Dynamic characteristics . . . . . . . . . . . . . . . . . . 5 12 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 13 Typical transfer characteristics . . . . . . . . . . . . 7 14 Application information ...