BGA2002,115 NXP Semiconductors, BGA2002,115 Datasheet - Page 3

• Manufacturer Part Number: BGA2002,115
• Description: MMIC AMPLIFIER SOT343R
• Manufacturer: NXP Semiconductors
• Type: Monolithic Microwave Integrated Circuit (MMIC)r

Specifications of BGA2002,115

• Current - Supply: 4.5mA
• Frequency: 0Hz ~ 2.2GHz
• Gain: 19.5dB
• Noise Figure: 1.3dB
• P1db: -2dBm
• Package / Case: SC-82A, SOT-343
• Rf Type: General Purpose
• Test Frequency: 1.8GHz
• Voltage - Supply: 4.5V
• Operating Supply Voltage: 4.5 V
• Supply Current: 30 mA
• Maximum Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Channels: 1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
Table 7.
V
BGA2002
Product data sheet
Symbol Parameter
I
MSG
|S21|
P
NF
IP3
CC
bias
Fig 1.
L(1dB)
I
= 2.5 V; I
2
supply current
maximum stable gain
insertion power gain
output power at 1 dB gain compression I
noise figure
input third-order intercept point
Typical application circuit
Characteristics
bias
RF in
GND
IN
= 4 mA; T
BGA2002
C
100 pF
Table 6.
Symbol
R
th(j-sp)
amb
L1
V
GND
bias
= 25
R1
C
°
Thermal characteristics
Parameter
thermal resistance from junction to
solder point
C; unless otherwise specified.
001aam919
V
RF out
All information provided in this document is subject to legal disclaimers.
CC
Rev. 4 — 9 February 2011
Conditions
V
V
V
f = 900 MHz
f = 1800 MHz
f = 900 MHz
f = 900 MHz
Γ
Γ
I
I
bias
bias
bias
S
S
bias
bias
bias
= Γ
= Γ
= 4.4 mA; f = 900 MHz
= 4.4 mA; f = 900 MHz
= 4.4 mA; f = 1800 MHz
= 1 V
= 2.5 V
= 4.5 V
opt
opt
; f = 900 MHz
; f = 1800 MHz
Fig 2.
(mW)
P
tot
200
150
100
50
0
0
Power derating curve
Conditions
P
tot
= 135 mW; T
50
sp
100
= 100 °C
Min
-
3
-
-
-
-
-
-
-
-
-
-
150
BGA2002
Typ
0.7
4.5
11
22
19.5
18
14
−2
1.3
1.3
−7.4
−4.5
© NXP B.V. 2011. All rights reserved.
T
001aam920
sp
MMIC amplifier
Typ
350
(°C)
Max
-
6
-
-
-
-
-
-
-
-
-
-
200
Unit
K/W
3 of 15
Unit
mA
mA
mA
dB
dB
dB
dB
dBm
dB
dB
dBm
dBm