74AHCT1G32GW/T1 NXP Semiconductors, 74AHCT1G32GW/T1 Datasheet - Page 2

74AHCT SINGLE GATE, SMD, 74AHCT1G32

74AHCT1G32GW/T1

Manufacturer Part Number
74AHCT1G32GW/T1
Description
74AHCT SINGLE GATE, SMD, 74AHCT1G32
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 74AHCT1G32GW/T1

Output Current
8mA
No. Of Inputs
2
Supply Voltage Range
4.5V To 5.5V
Logic Case Style
SOT-353
No. Of Pins
5
Operating Temperature Range
-40°C To +125°C
Svhc
No SVHC
Logic Type
OR Gate
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Philips Semiconductors
FEATURES
QUICK REFERENCE DATA
GND = 0 V; T
Notes
1. C
2. V
2002 Jun 05
t
C
C
PHL
SYMBOL
Symmetrical output impedance
High noise immunity
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
Low power dissipation
Balanced propagation delays
Multiple very small 5-pin packages
Output capability: standard
Specified from 40 to +125 C.
I
PD
2-input OR gate
P
f
f
C
V
i
o
/t
D
CC
I
PD
= input frequency in MHz;
L
PLH
= output frequency in MHz;
= GND to V
= output load capacitance in pF;
= C
is used to determine the dynamic power dissipation (P
= supply voltage in Volts.
PD
amb
propagation delay A and B to Y C
input capacitance
power dissipation capacitance
V
CC
= 25 C; t
CC
2
.
PARAMETER
f
i
+ (C
r
= t
L
f
V
3.0 ns.
CC
2
f
o
) where:
C
notes 1 and 2
L
L
= 15 pF; V
= 50 pF; f = 1 MHz;
CONDITIONS
2
DESCRIPTION
The 74AHC1G/AHCT1G32 is a high-speed Si-gate CMOS
device.
The 74AHC1G/AHCT1G32 provides the 2-input
OR function.
CC
D
= 5 V
in W).
74AHC1G32; 74AHCT1G32
3.2
1.5
16
AHC1G
TYPICAL
3.3
1.5
17
AHCT1G
Product specification
ns
pF
pF
UNIT

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