NTE2532 NTE ELECTRONICS, NTE2532 Datasheet

NTE2532

Manufacturer Part Number

NTE2532

Description

IC, EPROM, 32KBIT, 300NS, DIP-24

Manufacturer

NTE ELECTRONICS

Datasheet

1.NTE2532.pdf (4 pages)

Specifications of NTE2532

Memory Type

EPROM - OTP

Memory Size

32Kbit

Memory Configuration

32K X 8

Access Time

300ns

Supply Voltage Range

4.75V To 5.25V

Memory Case Style

DIP

No. Of Pins

Current page: 1 of 4
Download datasheet (36Kb)

Description:

The NTE2532 is a 32,768–bit, ultraviolet–light–erasable, electrically–programmable read–only

memory in a 24–Lead DIP type package. This device is fabricated using N–channel silicon–gate

technology for high speed and simple interface with MOS and bipolar circuits. All inputs (including

program data inputs) can be directly driven by Series 74 TTL circuits without the use of external pull–

up reistors, and each output can drive one Series 74 circuit without external resistors. The data out-

puts are three–state for connecting mutiple devices to a common bus.

Since the NTE2532 operates from a single +5V supply (in the read mode), it is ideal for use in micro-

processor systems. One other (+25V) supply is needed for programming but all programming signals

are TTL level, requiring a single 10ms pulse. For programming outside of the system, existing

EPROM programmers can be used. Locations may be programmed singly, in blocks, or at random.

Total programming time for all bits is 41 seconds.

Features:

D Organization: 4096 x 8

D Single +5V Power Supply

D All Inputs/Outputs Fully TTL Compatible

D Static Operation (No Clocks, No Refresh)

D Max Acces/Min Cycle Time: 300ns

D 8–Bit Output for Use in Microprocessor Based Systems

D N–Channel Silicon–Gate Technology

D 3–State Output Buffers

D Low Power Dissipation:

D Guaranteed DC Noise Immunity with Standard TTL Loads

D No Pull–Up Resistors Required

Absolute Maximum Ratings: (T

Supply Voltage (Note 2), V

All Input Voltages (Note 1)

Output Voltage (Operating, with Respect to V

Operating Ambient Temperature Range, T

Storage Temperature Range, T

Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent dam-

Note 2. Under absolute maximum ratings, voltage values are with respect to the most negative supply

age to the device. This is a stress rating only and functional operation of the device at these

or any other conditions beyond those indicated in the “Recommended Operation Conditions”

section of this specification is not implied. Exposure to absolute–maximum–rated conditions

for extended periods may affect device reliability.

voltage, V

Active – 400mW Typical

Standby – 100mW Standby

(substrate).

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NMOS, 32K EPROM, 300ns

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

= 0 to +70 C, Note 1 unless otherwise specified)

Integrated Circuit

NTE2532

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55 to +150 C

–0.3V to +28V

–0.3V to +7V

–0.3V to 7V

0 to +70 C

Related parts for NTE2532

NTE2532 Summary of contents

Page 1

... Series 74 circuit without external resistors. The data out- puts are three–state for connecting mutiple devices to a common bus. Since the NTE2532 operates from a single +5V supply (in the read mode ideal for use in micro- processor systems. One other (+25V) supply is needed for programming but all programming signals are TTL level, requiring a single 10ms pulse ...

Page 2

Recommended Operating Conditions: Parameter Supply Voltage High Level Input Voltage Low Level Input Voltage Read Cycle Time Operating Ambient Temperature Note 3. V must be applied before or at the same time time The ...

Page 3

... Q Read/Out Disable When the outputs of two or more NTE2532s are connected on the same bus, the output of any particular device in the circuit can be read with no interference from the cpmpeting outputs of the other devices. The device whose output read should have a low–level TTL signal applied to the PD/PGM pin. ...

Page 4

... When two or more devices are connected in parallel, data can be programmed into all devices or only chosen devices. Any NTE2532 not intended to be programmed should have a high level applied to PD/PGM. Programming Verification The NTE2532 program verification is simply the read operation, which can be performed as soon as V returns to +5V ending the program cycle ...

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