LTC4357IDCB#PBF Linear Technology, LTC4357IDCB#PBF Datasheet
LTC4357IDCB#PBF
Specifications of LTC4357IDCB#PBF
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LTC4357IDCB#PBF Summary of contents
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... If the power source fails or is shorted, a fast turn-off minimizes reverse current transients. L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. Power Dissipation vs Load Current ...
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LTC4357 ABSOLUTE MAXIMUM RATINGS Supply Voltages IN, OUT, V ........................................ –0.3V to 100V DD Output Voltage GATE (Note 3) ........................ V Operating Ambient Temperature Range LTC4357C ................................................ 0°C to 70°C LTC4357I.............................................. –40°C to 85°C PIN CONFIGURATION TOP VIEW OUT 1 ...
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ELECTRICAL CHARACTERISTICS temperature range, otherwise specifi cations are at T SYMBOL PARAMETER I External N-Channel Gate Pull Up Current V GATE(UP) I External N-Channel Gate Pull Down GATE(DOWN) Current in Fault Condition t Gate Turn-Off Time OFF ΔV Source-Drain Regulation ...
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LTC4357 TYPICAL PERFORMANCE CHARACTERISTICS V Current ( 800 OUT 600 400 200 (V) DD 4357 G01 GATE Current vs Forward Drop ...
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PIN FUNCTIONS Exposed Pad: Exposed Pad may be left open or connected to GND. GATE: Gate Drive Output. The GATE pin pulls high, enhanc- ing the N-channel MOSFET when the load current creates more than 25mV of voltage drop across ...
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LTC4357 OPERATION High availability systems often employ parallel-connected power supplies or battery feeds to achieve redundancy and enhance system reliability. ORing diodes have been a popular means of connecting these supplies at the point of load. The disadvantage of this ...
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APPLICATIONS INFORMATION MOSFET Selection The LTC4357 drives an N-channel MOSFET to conduct the load current. The important features of the MOSFET are on-resistance the maximum drain-source DS(ON) voltage and the gate threshold voltage. DSS Gate drive ...
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LTC4357 APPLICATIONS INFORMATION V Hold-Up Circuit DD In the event of an input short, parasitic inductance between the input supply of the LTC4357 and the load bypass capacitor may cause V to glitch below its minimum DD operating voltage. This ...
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APPLICATIONS INFORMATION Layout Considerations Connect the IN and OUT pins as close as possible to the MOSFET’s source and drain pins. Keep the traces to the MOSFET wide and short to minimize resistive losses. See Figure ...
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LTC4357 TYPICAL APPLICATIONS MMBD1205 MMBD1205 10 –12V Reverse Input Protection Si4874DY V IN2 12V IN GATE OUT LTC4357 V DD GND –48V Reverse Input Protection FDB3672 V IN2 48V IN GATE OUT LTC4357 V DD GND V OUT 12V 10A ...
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... LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa- tion that the interconnection of its circuits as described herein will not infringe on existing patent rights. ...
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... MOSFET Diode-OR Controller LTC4354 Negative Voltage Diode-OR Controller and Monitor LTC4355 Positive Voltage Diode-OR Controller and Monitor Hot Swap is a trademark of Linear Technology Corporation. Linear Technology Corporation 12 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 FAX: (408) 434-0507 ● Plug-In Card Input Diode for Supply Hold-Up ...