SI9160BQ-T1 Vishay, SI9160BQ-T1 Datasheet

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SI9160BQ-T1

Manufacturer Part Number
SI9160BQ-T1
Description
IC, VOLTAGE MODE PWM CTRL, 6V, TSSOP-16
Manufacturer
Vishay
Datasheet

Specifications of SI9160BQ-T1

Input Voltage
6V
Output Voltage
5.2V
Output Current
10mA
Frequency
2MHz
Power Dissipation Pd
925mW
Supply Voltage Range
2.7V To 6V
Digital Ic Case Style
TSSOP
No. Of Pins
16
Mounting Style
SMD/SMT
Package / Case
TSSOP-16
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9160BQ-T1
Manufacturer:
JRC
Quantity:
4 323
DESCRIPTION
The Si9160 Controller for RF Power Amplifier Boost Converter
is a fixed-frequency, pulse-width-modulated power conversion
controller designed for use with the Si6801 application specific
MOSFET. The Si9160 and the Si6801 are optimized for high
efficiency switched-mode power conversion at 1 MHz and
over. The device has an enable pin which can be used to put
the converter in a low-current mode compatible with the
standby mode of most cellular phones. A wide bandwidth
feedback amplifier minimizes transient response time allowing
the device to meet the instantaneous current demands of
today’s
accommodates minimal size and cost battery pack
configurations.
Frequency control in switching is important to noise
management techniques in RF communications. The Si9160
is easily synchronized for high efficiency power conversion at
frequencies in excess of 1 MHz.
Document Number: 70029
S-40700—Rev. H, 19-Apr-04
FEATURES
D High Frequency Switching (up to 2 MHz)
D Optimized Output Drive Current (350 mA)
D Standby Mode
APPLICATION CIRCUIT
0.1 mF
digital
0.1 mF
2.2 k
1 Cell
LiIon
0.1 mF
Controller for RF Power Amplifier Boost Converter
protocols.
100 k
20 mF
10 k
The
N/C
FB
V
D
COMP
NI
V
GND
DD
REF
MAX
Si9160
input
UVLO
ENABLE
PGND
C
C
R
OSC
OSC
OSC
SET
D
V
D
voltage
LS4148
R
S
S
To Power
Management
range
56 pF
0.1 mF
4.7 mH
12 k
D Wide Bandwidth Feedback Amplifier
D Single-Cell LiIon and Three-cell NiCd or NiMH Operation
Optimizing the controller and the synchronous FETs results in
the highest conversion efficiency over a wide load range at the
switching frequencies of interest (1 MHz or greater). It also
minimizes the overshoot and gate ringing associated with
drive current and gate charge mismatches.
When disabled, the converter requires less than 330 mA. This
capability minimizes the impact of the converter on battery life
when the phone is in the standby mode.
Finally, operating voltage is optimized for LiIon battery
operation (2.7 V to 4.5 V) and can also be used with three-cell
NiCd or NiMH (3 V to 3.6 V), as well as four-cell NiCd or NiMH
(4 V to 4.8 V) battery packs.
The Si9160 is available in both standard and lead (Pb)-free
packages.
1
2
3
4
D
S
S
G
1
1
1
1
Si6801
G
D
S
S
5600 pF
2
2
2
2
100 W
8
7
6
5
LS4148
Vishay Siliconix
3.6 k
1.2 k
20 mF
6 V @ 500 mA
www.vishay.com
Si9160
1

Related parts for SI9160BQ-T1

SI9160BQ-T1 Summary of contents

Page 1

... NiCd or NiMH ( 3.6 V), as well as four-cell NiCd or NiMH ( 4.8 V) battery packs. The Si9160 is available in both standard and lead (Pb)-free packages. 4 LS4148 Si6801 0.1 mF PGND UVLO SET OSC OSC OSC ENABLE To Power Management Si9160 Vishay Siliconix 500 LS4148 100 W 3.6 k 5600 pF 1.2 k www.vishay.com 1 ...

Page 2

... Si9160 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Voltages Referenced to GND GND Linear Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Logic Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Output Drive Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . * . Exposure to Absolute Maximum rating conditions for extended periods may affect device reliability. Stresses above Absolute Maximum rating may cause permanent damage ...

Page 3

... ENABLE Rising to OUTPUT ENL ENH ENABLE = 6.0 V MAX MAX MHz = 1 MHz OSC OSC R = 7.0 kW OSC DD DD ENABLE = Low Vishay Siliconix Limits B Suffix −25 to 85_C GND GND Min Typ Max I = −10 mA 5.15 5.2 OUT 0.06 OUT −300 250 300 40 = 6.0 V 1.4 DD 0 − ...

Page 4

... Si9160 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) V vs. Load Current REF 1.502 1.501 2.7 V 1.500 1.499 1.498 6.0 V 1.497 − Sourcing Current (mA) REF Supply Current vs. Supply Voltage and Temperature 1000 pF −25_C 7.0 kW OSC 100 pF OSC − Supply Voltage (V) DD ...

Page 5

... Duty Cycle vs. D MAX 5 500 kHz 0.8 0.9 1.0 1.1 1.2 1.3 1.4 D (V) MAX Vishay Siliconix Frequency vs OSC OSC 4.98 kW 12.07 kW 24.88 kW 49.7 kW 100.4 kW 248 100 200 C − Capacitance (pF) OSC 1 MHz 1.5 MHz 1.5 1.6 Si9160 300 400 www.vishay.com 5 ...

Page 6

... REF 9 GND 8 ENABLE Top View Order Number: Si9160BQ-T1 PIN DESCRIPTION Pin The positive power supply for all functional blocks except output driver. A bypass capacitor of 0.1 mF (minimum) is recommended. Pin 2: N/C There is no internal connection to this pin. Pin 3: D MAX Used to set the maximum duty cycle. ...

Page 7

... FB − D MAX C OSC R OSC TIMING WAVEFORMS ENABLE 1 MAX V COSC BBM Document Number: 70029 S-40700—Rev. H, 19-Apr-04 V REF 1.5-V Reference Generator V UVLO + − − Logic and BBM Control Oscillator Si9160 Vishay Siliconix V REF GND Driver GND P GND V S Driver GND www.vishay.com 7 ...

Page 8

... Si9160 Vishay Siliconix OPERATION OF THE SI9160 BOOST CONVERTER The Si9160 combined with optimized complementary MOSFETs provides the ideal solution to small, high efficiency, synchronous boost power conversion. Optimized for a 1-cell lithium ion, or 3-cell to 4-cell Nickel metal hydride battery capable of switching at frequencies MHz. Combined ...

Page 9

... Li Battery Voltage Low Charge 2.7 V − Frequency (Hz) FIGURE 4. Stability, with 1-cell Li battery input 600-mA output. Si9160 Vishay Siliconix N-Channel Turn-Off 5 ns/DIV, 2 V/DIV +180_ Phase Phase Margin Gain > 50_ 0_ Li Battery Volt- age Full Charge 4.0 V −180_ 2 3 ...

Page 10

... Si9160 Vishay Siliconix Energy Storage Components The input and output ripple voltage is determined by the switching frequency, and the inductor and capacitor values. The higher the frequency, inductance, or capacitance values, the lower the ripple. The efficiency of the converter is also improved with higher inductance by reducing the conduction loss in the switch, synchronous rectifier, and the inductor itself ...

Page 11

... Additionally, synchronization to an external high frequency clock eliminates or greatly reduces any radio interference concerns and pushes harmonics out beyond signal processing frequencies. Si9160 Vishay Siliconix 500 ns/DIV CH1: Output Ripple (50 mV/DIV) CH2: P- and N-Channel Drain Voltage (2 V/DIV) FIGURE 7. Output noise of the Si9160 demo board ...

Page 12

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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