SI9160BQ-T1 Vishay, SI9160BQ-T1 Datasheet - Page 3

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SI9160BQ-T1

Manufacturer Part Number
SI9160BQ-T1
Description
IC, VOLTAGE MODE PWM CTRL, 6V, TSSOP-16
Manufacturer
Vishay
Datasheet

Specifications of SI9160BQ-T1

Input Voltage
6V
Output Voltage
5.2V
Output Current
10mA
Frequency
2MHz
Power Dissipation Pd
925mW
Supply Voltage Range
2.7V To 6V
Digital Ic Case Style
TSSOP
No. Of Pins
16
Mounting Style
SMD/SMT
Package / Case
TSSOP-16
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9160BQ-T1
Manufacturer:
JRC
Quantity:
4 323
Notes
a.
b.
c.
Document Number: 70029
S-40700—Rev. H, 19-Apr-04
SPECIFICATIONS
Output Drive (D
Output High Voltage
Output Low Voltage
Peak Source Output Current
Peak Sink Output Current
Break-Before-Make
Logic
ENABLE Delay to Output
ENABLE Logic Low
ENABLE Logic High
ENABLE Input Current
Duty Cycle
Maximum Duty Cycle
D
Supply
Supply Current Normal Mode
Supply Current—Normal Mode
Supply Current—Standby Mode
TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED)
MAX
C
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Guaranteed by design, not subject to production testing.
1.515
1.510
1.505
1.500
1.495
1.490
1.485
STRAY
/SS Input Current
2
< 5 pF on C
Parameter
V
REF
with 10-mA Load
R
3
OSC
and D
V
REF
V
. After Start-Up, V
DD
vs. Supply Voltage
− Supply Voltage (V)
S
)
4
CYCLE
Symbol
I
SOURCE
5
I
V
I
V
t
DMAX
V
td
DD
V
SINK
BBM
I
I
ENH
ENL
EN
DD
DD
OH
OL
EN
of w 3 V.
MAX
6
R
ENABLE Rising to OUTPUT, V
f
f
7
2.7 V v V
2.7 V v V
OSC
OSC
Unless Otherwise Specified
Unless Otherwise Specified
V
V
OSC
V
DD
DD
S
= 5.3 V
= 1 MHz
= 1 MHz
= 2.7 V
= 2.7 V
= 7.0 kW
V
V
Test Conditions
Test Conditions
DD
DD
ENABLE = 0 to V
DD
DD
D
ENABLE = Low
, V
, V
= 2 7 V V
= 2.7 V, V
MAX
V
V
S
S
DD
DD
v 6.0 V, GND = P
v 6.0 V, GND = P
= 0 to V
= 6.0 V
= 6.0 V
S
S
= 5 3 V
= 5.3 V
DD
DD
1.515
1.510
1.505
1.500
1.495
1.490
1.485
I
DD
OUT
I
OUT
V
V
DD
DD
= 6.0 V
−40
= −10 mA
GND
GND
= 10 mA
= 2.7 V
= 4.5 V
a
a
−20
V
0
V
REF
0.8 V
T − Temperature (_C)
Min
DD
−100
5.15
−1.0
250
= 2.7 V
vs. Temperature
DD
B Suffix −25 to 85_C
b
20
Vishay Siliconix
Limits
Typ
−300
V
0.06
300
250
5.2
1.4
1.1
1.6
40
40
80
DD
= 5.0 V
60
0.2 V
Max
−250
0.15
100
330
www.vishay.com
1.0
1.5
2.3
Si9160
95
DD
b
80
Unit
mA
mA
mA
mA
mA
nA
mA
ns
ms
%
V
V
V
V
100
3

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