2ED020I12-FI Infineon Technologies, 2ED020I12-FI Datasheet - Page 4
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2ED020I12-FI
Manufacturer Part Number
2ED020I12-FI
Description
IC, IGBT DRIVER, DUAL, PG-DSO-18-2
Manufacturer
Infineon Technologies
Type
MOSFET/IGBT Driverr
Datasheet
1.2ED020I12-FI.pdf
(22 pages)
Specifications of 2ED020I12-FI
Device Type
IGBT
Module Configuration
High Side
Peak Output Current
2A
Input Delay
85ns
Output Delay
85ns
Supply Voltage Range
14V To 18V
Driver Case Style
SO
No. Of Pins
18
Operating
RoHS Compliant
Product
Half-Bridge Drivers
Rise Time
40 ns
Fall Time
35 ns
Supply Voltage (min)
14 V
Supply Current
2.3 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
PG-DSO-18-2
Minimum Operating Temperature
- 40 C
Number Of Drivers
2
Number Of Outputs
2
Output Current
5 mA
Output Voltage
5.3 V
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2ED020I12-FI
Manufacturer:
Alliance
Quantity:
101
Part Number:
2ED020I12-FI
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
High and Low Side Driver
Final Data
2ED020I12-FI
Overview
1
Overview
The 2ED020I12-FI is a high voltage, high speed power MOSFET and IGBT driver with
interlocking high and low side referenced outputs. The floating high side driver may be
supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic
input of each driver the 2ED020I12-FI is equipped with a dedicated shutdown input. All
logic inputs are compatible with 3.3 V and 5 V TTL. The output drivers feature a high
pulse current buffer stage designed for minimum driver cross-conduction. Propagation
delays are matched to simplify use in high frequency applications. Both drivers are
designed to drive an N-channel power MOSFET or IGBT which operate up to 1.2 kV. In
addition, a general purpose operational amplifier and a general purpose comparator are
provided which may be used for instance for current measurement or overcurrent
detection.
Final Datasheet
4
September 2007