HY27UF082G2B-TPCB HYNIX SEMICONDUCTOR, HY27UF082G2B-TPCB Datasheet - Page 18

IC, MEMORY, FLASH NAND 2GB, TSOP48

HY27UF082G2B-TPCB

Manufacturer Part Number
HY27UF082G2B-TPCB
Description
IC, MEMORY, FLASH NAND 2GB, TSOP48
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet

Specifications of HY27UF082G2B-TPCB

Access Time
20ns
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Package / Case
TSOP
Base Number
27
Interface
Serial
Logic
RoHS Compliant
Memory Type
Flash - NAND
Memory Configuration
256M X 8
Rohs Compliant
Yes

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Part Number:
HY27UF082G2B-TPCB
Quantity:
8
Rev 0.2 / Jan. 2008
NOTE:
1. The 1st block is guaranteed to be a valid block at the time of shipment.
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
the device at these or any other conditions above those indicated in the Operating sections of this specification is
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Refer also to the Hynix SURE Program and other relevant quality documents.
Symbol
VIO
Parameter
T
T
Valid Block
Vcc
BIAS
T
STG
Number
A
(2)
Ambient Operating Temperature (Commercial Temperature Range)
Ambient Operating Temperature (Industrial Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Symbol
NVB
Table 8: Absolute maximum ratings
Table 7 : Valid Blocks Numbers
Parameter
2008
Min
Typ
-
2Gbit (256Mx8bit) NAND Flash
HY27UF(08/16)2G2B Series
2048
Max
-50 to 125
-65 to 150
-0.6 to 4.6
-0.6 to 4.6
-40 to 85
0 to 70
Value
Blocks
Unit
Unit
V
V
V
18

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