M29W400DB45N6E NUMONYX, M29W400DB45N6E Datasheet - Page 32

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M29W400DB45N6E

Manufacturer Part Number
M29W400DB45N6E
Description
MEMORY, FLASH, NOR, 4MB, B/B, 48TSOP
Manufacturer
NUMONYX
Datasheet

Specifications of M29W400DB45N6E

Memory Size
4Mbit
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Package / Case
TSOP
Access Time
45ns
Memory
RoHS Compliant
Memory Type
Flash - Boot Block
Memory Configuration
512K X 8, 256K X 16
Interface Type
Parallel
Rohs Compliant
Yes

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Part Number:
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0
Figure 12. Write AC waveforms, Write Enable controlled
Table 13.
1. Sampled only, not 100% tested.
32/48
Symbol
t
WHRL
t
t
t
t
t
t
t
t
t
t
t
VCHEL
t
WLWH
DVWH
WHDX
WHEH
WHWL
GHWL
WHGL
AVWL
WLAX
ELWL
AVAV
(1)
A0-A17/
A–1
E
G
W
DQ0-DQ7/
DQ8-DQ15
V CC
RB
Write AC characteristics, Write Enable controlled
t
t
t
BUSY
t
t
WPH
t
OEH
Alt
t
t
t
t
t
t
VCS
WC
WP
CS
DS
DH
CH
AH
AS
Address Valid to Next Address Valid
Chip Enable Low to Write Enable Low
Write Enable Low to Write Enable High
Input Valid to Write Enable High
Write Enable High to Input Transition
Write Enable High to Chip Enable High
Write Enable High to Write Enable Low
Address Valid to Write Enable Low
Write Enable Low to Address Transition
Output Enable High to Write Enable Low
Write Enable High to Output Enable Low
Program/Erase Valid to RB Low
V
CC
tVCHEL
High to Chip Enable Low
tELWL
tGHWL
tAVWL
Parameter
tAVAV
VALID
tWLWH
tDVWH
tWHRL
VALID
tWLAX
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
tWHEH
tWHGL
tWHWL
tWHDX
45
45
30
25
30
40
30
50
0
0
0
0
0
0
M29W400D
55
55
30
30
30
45
30
50
0
0
0
0
0
0
AI01869C
70
70
30
45
30
45
35
50
0
0
0
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs

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