P89LPC938FA NXP Semiconductors, P89LPC938FA Datasheet - Page 43
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P89LPC938FA
Manufacturer Part Number
P89LPC938FA
Description
IC, MCU 8BIT 80C51 8K FLASH, PLCC28
Manufacturer
NXP Semiconductors
Datasheet
1.P89LPC938FA.pdf
(68 pages)
Specifications of P89LPC938FA
Controller Family/series
(8051) 8052
Core Size
8bit
No. Of I/o's
26
Program Memory Size
8KB
Eeprom Memory Size
512Byte
Ram Memory Size
768Byte
Cpu Speed
18MHz
Oscillator Type
External,
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
P89LPC938FA
Manufacturer:
ST
Quantity:
760
Part Number:
P89LPC938FA
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
P89LPC938FA,129
Manufacturer:
NXP Semiconductors
Quantity:
10 000
Company:
Part Number:
P89LPC938FAЈ¬129
Manufacturer:
NXP
Quantity:
1 503
Philips Semiconductors
9397 750 14051
Product data sheet
7.28.1 General description
7.28.2 Features
7.27 Data EEPROM
7.28 Flash program memory
The P89LPC938 has 512 bytes of on-chip Data EEPROM. The Data EEPROM is SFR
based, byte readable, byte writable, and erasable (via row fill and sector fill). The user can
read, write and fill the memory via SFRs and one interrupt. This Data EEPROM provides
100,000 minimum erase/program cycles for each byte.
After the operation finishes, the hardware will set the EEIF bit, which if enabled will
generate an interrupt. The flag is cleared by software.
The P89LPC938 Flash memory provides in-circuit electrical erasure and programming.
The Flash can be erased, read, and written as bytes. The Sector and Page Erase
functions can erase any Flash sector (1 kB) or page (64 bytes). The Chip Erase operation
will erase the entire program memory. In-Circuit Programming using standard commercial
programmers is available. In addition, IAP and byte-erase allows code memory to be used
for non-volatile data storage. On-chip erase and write timing generation contribute to a
user-friendly programming interface. The P89LPC938 Flash reliably stores memory
contents even after 100,000 erase and program cycles. The cell is designed to optimize
the erase and programming mechanisms. The P89LPC938 uses V
voltage to perform the Program/Erase algorithms.
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Byte Mode: In this mode, data can be read and written one byte at a time.
Row Fill: In this mode, the addressed row (64 bytes) is filled with a single value. The
entire row can be erased by writing 00h.
Sector Fill: In this mode, all 512 bytes are filled with a single value. The entire sector
can be erased by writing 00h.
Programming and erase over the full operating voltage range.
Byte erase allows code memory to be used for data storage.
Read/Programming/Erase using ISP/IAP/ICP.
Internal fixed boot ROM, containing low-level IAP routines available to user code.
Default loader providing In-System Programming via the serial port, located in upper
end of user program memory.
Boot vector allows user-provided Flash loader code to reside anywhere in the Flash
memory space, providing flexibility to the user.
Any flash program/erase operation in 2 ms.
Programming with industry-standard commercial programmers.
Programmable security for the code in the Flash for each sector.
100,000 typical erase/program cycles for each byte.
10 year minimum data retention.
Rev. 01 — 25 February 2005
8-bit microcontroller with 10-bit A/D converter
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
P89LPC938
DD
as the supply
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