DSPIC30F1010-20E/SO Microchip Technology, DSPIC30F1010-20E/SO Datasheet - Page 36

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DSPIC30F1010-20E/SO

Manufacturer Part Number
DSPIC30F1010-20E/SO
Description
6KB, Flash, 256bytes-RAM, 30MIPS, 21I/O, 16-bit Family,nanoWatt 28 SOIC .300in T
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr

Specifications of DSPIC30F1010-20E/SO

Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
21
Program Memory Size
6KB (2K x 24)
Program Memory Type
FLASH
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
28-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DM300023 - KIT DEMO DSPICDEM SMPS BUCKDV164005 - KIT ICD2 SIMPLE SUIT W/USB CABLE
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F1010-20E/SO
Manufacturer:
Microchip Technology
Quantity:
135
Part Number:
DSPIC30F1010-20E/SO
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
TABLE 11-8:
DS70284C-page 36
Step 5: Set the read pointer (W6) and load the (next set of) write latches.
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
Step 6: Repeat steps 4-5 eight times to load the write latches for 32 instructions.
Step 7: Unlock the NVMCON for writing.
0000
0000
0000
0000
Step 8: Initiate the write cycle.
0000
0000
0000
0000
0000
0000
0000
0000
0000
0000
Step 9: Reset device internal PC.
0000
0000
Step 10: Repeat steps 2-9 until all code memory is programmed.
Command
(Binary)
EB0300
000000
BB0BB6
000000
000000
BBDBB6
000000
000000
BBEBB6
000000
000000
BB1BB6
000000
000000
BB0BB6
000000
000000
BBDBB6
000000
000000
BBEBB6
000000
000000
BB1BB6
000000
000000
200558
883B38
200AA9
883B39
A8E761
000000
000000
000000
000000
A9E761
000000
000000
000000
000000
040100
000000
SERIAL INSTRUCTION EXECUTION FOR WRITING CODE MEMORY (CONTINUED)
(Hex)
Data
CLR
NOP
TBLWTL
NOP
NOP
TBLWTH.B
NOP
NOP
TBLWTH.B
NOP
NOP
TBLWTL
NOP
NOP
TBLWTL
NOP
NOP
TBLWTH.B
NOP
NOP
TBLWTH.B
NOP
NOP
TBLWTL
NOP
NOP
MOV
MOV
MOV
MOV
BSET
NOP
NOP
NOP
NOP
Externally time 'P18a' msec
Requirements”)
BCLR
NOP
NOP
NOP
NOP
GOTO 0x100
NOP
W6
[W6++], [W7]
[W6++], [W7++]
[W6++], [++W7]
[W6++], [W7++]
[W6++], [W7]
[W6++], [W7++]
[W6++], [++W7]
[W6++], [W7++]
#0x55, W8
W8, NVMKEY
#0xAA, W9
W9, NVMKEY
NVMCON, #WR
NVMCON, #WR
(see
Description
Section 13.0 “AC/DC Characteristics and Timing
© 2010 Microchip Technology Inc.

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