PIC18F1230-I/ML Microchip Technology, PIC18F1230-I/ML Datasheet - Page 8

• Manufacturer Part Number: PIC18F1230-I/ML
• Description: Microcontroller
• Manufacturer: Microchip Technology
• Series: PIC® 18Fr

Specifications of PIC18F1230-I/ML

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: UART/USART
• Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Size: 4KB (2K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 128 x 8
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 4.2 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-VQFN Exposed Pad, 28-HVQFN, 28-SQFN, 28-DHVQFN
• Processor Series: PIC18F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: EUSART
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 16
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, DV164136
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 4 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: AC164322 - MODULE SOCKET MPLAB PM3 28/44QFN
• Lead Free Status / Rohs Status: Details

PIC18F1230/1330
8. Module: Electrical Characteristics
In Table 22-1, the values for the D122 and D133A
parameters are changed as indicated by bold text.
TABLE 22-1:
DS80352B-page 8
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D125
D130
D131
D132B V
D133A T
D134
D135
Note 1:
Param
No.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
T
T
I
E
V
T
I
DDP
DDP
Sym
RETD
REF
IW
RETD
DEW
D
DRW
P
PR
PEW
only and are not tested.
Refer to Section 7.8 for a more detailed discussion on data EEPROM endurance.
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Supply Current during
Programming
Program Flash Memory
Cell Endurance
V
V
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
for Read/Write
for Read
for Self-Timed Write
Characteristic
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
100K
V
V
V
3.59
1.79
Min
10K
1M
40
40
—
—
MIN
MIN
MIN
Typ†
100K
4.10
10M
2.05
100
1M
10
10
—
—
—
—
Max
4.86
2.43
5.5
5.5
5.5
—
—
—
—
—
—
—
-40°C ≤ T
Units
Year Provided no other
Year Provided no other
E/W -40°C to +85°C
E/W -40°C to +85°C
E/W -40°C to +85°C
mA
mA
ms
ms
V
V
V
A
© 2008 Microchip Technology Inc.
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
V
voltage
specifications are violated
≤ +85°C for industrial
MIN
MIN
MIN
= Minimum operating
= Minimum operating
= Minimum operating
Conditions