NUP1301 NXP Semiconductors, NUP1301 Datasheet - Page 3

• Manufacturer Part Number: NUP1301
• Description: DIODE,DUAL TVS,UNI DIR,220W,80V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of NUP1301

• Reverse Stand-off Voltage Vrwm: 80V
• Breakdown Voltage Range: 100V
• Clamping Voltage Vc Max: 20V
• Diode Configuration: Unidirectional
• Peak Pulse Current Ippm: 11A
• Diode Case Style: SOT-23
• No. Of: RoHS Compliant

NXP Semiconductors
NUP1301_1
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
[6]
Table 6.
[1]
[2]
Table 7.
Symbol
I
Per device
P
I
P
T
T
T
Symbol
V
Standard
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
FSM
PP
j
amb
stg
PP
tot
ESD
Pulse test: t
T
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
Single diode loaded.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
j
= 25 C prior to surge.
Parameter
electrostatic discharge
voltage
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
non-repetitive peak
forward current
peak pulse power
peak pulse current
total power dissipation
junction temperature
ambient temperature
storage temperature
p
300 s;
Rev. 01 — 11 May 2009
0.02.
…continued
Conditions
square wave
t
t
T
p
p
Conditions
IEC 61000-4-2
(contact discharge)
machine model
MIL-STD-883
(human body model)
amb
t
t
t
= 8/20 s
= 8/20 s
p
p
p
= 1 s
= 1 ms
= 1 s
25 C
Ultra low capacitance ESD protection array
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
[3][4]
[3][4]
[5][6]
[1][2]
[2]
Min
-
-
-
-
-
-
-
Min
-
-
-
55
65
NUP1301
© NXP B.V. 2009. All rights reserved.
Max
4
1
0.5
220
11
250
150
+150
+150
Max
30
400
10
Unit
A
A
A
W
A
mW
Unit
kV
V
kV
C
C
C
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