PESD36VS2UT NXP Semiconductors, PESD36VS2UT Datasheet - Page 6

• Manufacturer Part Number: PESD36VS2UT
• Description: DIODE,DUAL ESD TVS,UNI DIR,36V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD36VS2UT

• Reverse Stand-off Voltage Vrwm: 36V
• Breakdown Voltage Range: 40V
• Clamping Voltage Vc Max: 60V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 2.5A
• Diode Case Style: SOT-23
• No. Of: RoHS Compliant

NXP Semiconductors
PESD36VS2UT_1
Product data sheet
Fig 6.
GND
GND
ESD clamping test setup and waveforms
Note 1: IEC61000-4-2 network
unclamped 1 kV ESD voltage waveform
(IEC61000-4-2 network)
unclamped 1 kV ESD voltage waveform
(IEC61000-4-2 network)
C
Z
ESD TESTER
= 150 pF; R
C Z
R Z
note 1
Z
= 330
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
DUT: PESD36VS2UT
450
Rev. 01 — 16 July 2009
Low capacitance unidirectional double ESD protection diode
50
RG 223/U
coax
GND
GND
clamped 1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped 1 kV ESD voltage waveform
(IEC61000-4-2 network)
ATTENUATOR
10
PESD36VS2UT
vertical scale = 10 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
OSCILLOSCOPE
4 GHz DIGITAL
© NXP B.V. 2009. All rights reserved.
50
006aab616
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