CGH40120F Cree Inc, CGH40120F Datasheet - Page 4

• Manufacturer Part Number: CGH40120F
• Description: CGH40120, 120W, GaN HEMT By Cree For General Purpose (Wireless
• Manufacturer: Cree Inc

Specifications of CGH40120F

• Mfg Application Notes: Thermal Performance Guide
• Transistor Type: HEMT
• Frequency: 0Hz ~ 4GHz
• Gain: 19dB @ 1.3GHz
• Voltage - Rated: 84V
• Current Rating: 28A
• Current - Test: 1A
• Voltage - Test: 28V
• Power - Output: 120W
• Package / Case: 440193
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: CGH40120F-TB - BOARD DEMO AMP CIRCUIT CGH40120
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: CGH40120FE

Typical 800 MHz - 1300 MHz Performance
Typical Digital Video Broadcast (DVB) Performance
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
4
Gain, Output Power, and Power Added Efficiency vs Frequency of the CGH40120F
CGH40120F Rev 2.2
Output Power and Power Added Efficiency vs Frequency of the CGH40120F
160
150
140
130
120
100
110
measured in 0.8-1.3 GHz Amplifier Circuit 03-000255.
30
25
20
15
15
10
5
0
1350
750
measured in DVB Amplifier Circuit 03-000256.
800
1375
850
Gain (Assoc)
1400
900
Small Signal Gain (dB)
Psat (W)
V
V
DD
DD
950
1425
= 28 V, I
= 32 V, I
1000
Frequency (MHz)
Frequency (MHz)
Gain (SS)
1450
1050
DQ
DQ
Assoc. Gain (dB)
PAE (%)
1100
= 1.0 A
= 1.0 A
Output Power (W)
PAE (%)
1475
PAE
P
1150
SAT
1500
1200
1250
1525
1300
1550
1350
80
75
70
65
65
60
55
50
150
125
100
75
75
50
25
0
USA Tel: [phone]
www.cree.com/wireless
Fax: [phone]
Durham, NC 27703
4600 Silicon Drive
Cree, Inc.