CGH40120F Cree Inc, CGH40120F Datasheet - Page 5

• Manufacturer Part Number: CGH40120F
• Description: CGH40120, 120W, GaN HEMT By Cree For General Purpose (Wireless
• Manufacturer: Cree Inc

Specifications of CGH40120F

• Mfg Application Notes: Thermal Performance Guide
• Transistor Type: HEMT
• Frequency: 0Hz ~ 4GHz
• Gain: 19dB @ 1.3GHz
• Voltage - Rated: 84V
• Current Rating: 28A
• Current - Test: 1A
• Voltage - Test: 28V
• Power - Output: 120W
• Package / Case: 440193
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: CGH40120F-TB - BOARD DEMO AMP CIRCUIT CGH40120
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: CGH40120FE

Typical Digital Video Broadcast (DVB) Performance
Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
5
V
CGH40120F Rev 2.2
DD
= 32 V, I
Small Signal Gain and Return Loss vs Frequency of the CGH40120F
for a CGH40120F in DVB Amplifier Circuit 03-000256 at 1450 MHz.
Typical Constellation Chart and Spectral Mask using 16QAM OFDM
-15
-25
-35
25
15
-5
-5
5
1200
DQ
= 1.0 A, P
measured in DVB Amplifier Circuit 03-000256.
1300
AVE
= 40 W, Drain Efficiency = 40 %, Signal PAR = 5.3 dB
V
1400
DD
-21.41
= 32 V, I
Frequency (MHz)
19.30
1500
DQ
= 1.0 A
1600
1700
S21
S11
1800
25
15
5
-5
-5
-15
-25
-35
USA Tel: [phone]
www.cree.com/wireless
Fax: [phone]
Durham, NC 27703
4600 Silicon Drive
Cree, Inc.