DSSK 40-008B IXYS SEMICONDUCTOR, DSSK 40-008B Datasheet - Page 2
DSSK 40-008B
Manufacturer Part Number
DSSK 40-008B
Description
DIODE, SCHOTTKY, 2X20A, 80V
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.DSSK40-008B.pdf
(2 pages)
Specifications of DSSK 40-008B
Repetitive Reverse Voltage Vrrm Max
80V
Forward Current If(av)
20A
Forward Voltage Vf Max
520mV
Forward Surge Current Ifsm Max
500A
Operating Temperature
RoHS Compliant
Diode Configuration
Dual
Diode Type
Schottky
IXYS reserves the right to change limits, Conditions and dimensions.
© 2005 IXYS All rights reserved
Z
I
F
I
thJC
0.01
F(AV)
K/W
100
0.1
10
80
60
40
20
A
0.0001
A
1
2
1
0
0.0
0
Fig. 1 Maximum forward voltage
Fig. 4 Average forward current I
Fig. 6 Transient thermal impedance junction to case at various duty cycles
D = 0.5
0.33
0.25
0.08
0.17
0.2
40
drop characteristics
versus case temperature T
d = 0.5
0.4
80
0.001
T
DC
Single Pulse
C
V
120
0.6
T
150°C
125°C
F
VJ
25°C
=
°C
160
V
F(AV)
C
0.01
I
P
R
1000
(AV)
100
mA
0.1
10
60
W
50
40
30
20
10
1
0
0
0 10 20 30 40 50 60 70
125°C
Fig. 2 Typ. value of reverse current
Fig. 5 Forward power loss
100°C
75°C
T
50°C
25°C
VJ
=150°C
I
characteristics
20
R
vs. reverse voltage V
0.1
s
40
I
F(AV)
t
V
R
DSSK 40-008B
d =
DC
0.5
0.33
0.25
0.17
0.08
60
A
V
1
R
10000
10000
I
FSM
C
1000
1000
T
100
100
pF
A
10
0 10 20 30 40 50 60 70
Fig. 3 Typ. junction capacitance
DSSK 40-008B
C
100
T
T
vs. reverse voltage V
VJ
= 25°C
1000
V
t
R
P
s
10000
V
2 - 2
R