ES2A-E3/52T Vishay, ES2A-E3/52T Datasheet - Page 3

FAST RECOVERY DIODE, 2A, 50V, DO-214AA

ES2A-E3/52T

Manufacturer Part Number
ES2A-E3/52T
Description
FAST RECOVERY DIODE, 2A, 50V, DO-214AA
Manufacturer
Vishay
Datasheets

Specifications of ES2A-E3/52T

Repetitive Reverse Voltage Vrrm Max
50V
Forward Current If(av)
2A
Forward Voltage Vf Max
900mV
Reverse Recovery Time Trr Max
20ns
Diode Type
Fast Recovery
Voltage - Forward (vf) (max) @ If
900mV @ 2A
Voltage - Dc Reverse (vr) (max)
50V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
10µA @ 50V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
30ns
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
50 V
Forward Voltage Drop
0.9 V
Recovery Time
30 ns
Forward Continuous Current
2 A
Max Surge Current
50 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
ES2A-E3/5BT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ES2A-E3/52T
Manufacturer:
VISHAY
Quantity:
30 000
RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88587
Revision: 04-Jul-07
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
0.01
100
3.0
2.0
1.0
0.1
Figure 1. Maximum Forward Current Derating Curve
60
50
40
30
20
10
10
0
0
1
80
0.2
1
(5.0 x 5.0 mm) Copper Pad Areas
T
P.C.B. Mounted on 0.2 x 0.2"
j
Resistive or Inductive Load
= 125 °C
90
0.4
T
Instantaneous Forward Voltage (V)
j
= 150 °C
Number of Cycles at 60 Hz
100
Lead Temperature (°C)
0.6
110
8.3 ms Single Half Sine-Wave
at T
0.8
10
L
T
= 110 °C
j
= 25 °C
120
T
1
j
130
= 100 °C
1.2
140
150
100
1.4
10000
1000
100
0.1
60
50
40
30
20
10
10
Figure 4. Typical Reverse Leakage Characteristics
0
1
0.1
0
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Junction Capacitance
20
Reverse Voltage (V)
1
T
40
j
= 125 °C
T
T
T
ES2A thru ES2D
j
j
j
= 150 °C
= 25 °C
= 100 °C
60
10
T
f = 1.0 MHz
V
j
sig
= 25 °C
= 50 mVp-p
80
www.vishay.com
100
100
3

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