HSCH-5531 Avago Technologies US Inc., HSCH-5531 Datasheet

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HSCH-5531

Manufacturer Part Number
HSCH-5531
Description
SCHOTTKY RECTIFIER, 1mA, 4V
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of HSCH-5531

Repetitive Reverse Voltage Vrrm Max
4V
Forward Voltage Vf Max
375mV
Operating Temperature Range
-65°C To +175°C
No. Of Pins
2
Peak Reflow Compatible (260 C)
No
Diode Type
Schottky
Function
Diode
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HSCH-5531
Manufacturer:
AVAGO
Quantity:
40 000
Part Number:
HSCH-5531
Manufacturer:
AVAGO/安华高
Quantity:
20 000
HSCH-55XX
Beam Lead Schottky Diode Pairs for Mixers and Detectors
Data Sheet
Description
These dual beam lead diodes are constructed using
a metal-semiconductor Schottky barrier junction.
Advanced epitaxial techniques and precise process
control insure uniformity and repeatability of this planar
passivated microwave semiconductor. A nitride passiva-
tion layer provides immunity from contaminants which
could otherwise lead to IR drift.
The Avago beam lead process allows for large beam
anchor pads for rugged construction (typical 6 gram pull
strength) without degrading capacitance.
Applications
The beam lead diode is ideally suited for use in stripline
or microstrip or coplanar waveguide circuits. Its small
physical size and uniform dimensions give it low parasit-
ics and repeatable RF characteristics through K-band.
These dual beam leads are intended for use in balanced
mixers and in even harmonic anti-parallel pair mixers.
By using several of these devices in the proper configu-
ration it is easy to assemble bridge quads, star quads,
and ring quads for Class I, II, or III type double balanced
mixers.
Assembly Techniques
Thermocompression bonding is recommended. Welding
or conductive epoxy may also be used. For additional in-
formation see Application Note 979, “The Handling and
Bonding of Beam Lead Devices Made Easy, ” or Applica-
tion Note 993, “Beam Lead Device Bonding to Soft Sub-
strates. ”
Features
• Monolithic Pair: Closely Matched Electrical Parameters
• Low Capacitance: 0.1 pF Maximum at 0 Volts
• Low Noise Figure: Typical 7.5 dB at 26 GHz
• Rugged Construction: 4 Grams Minimum Lead Pull
• Platinum Tri-Metal System: High Temperature Stability
• Polyimide Scratch Protection
• Silicon Nitride Passivation: Stable, Reliable Performance
Outline 04B
120 (5.0)
90 (3.5)
8 Min. (0.3)
BEAMS
GOLD
CATHODE
220 (9.0)
180 (7.0)
CATHODE
GLASS
PLATINUM
METALLIZATION
DIMENSIONS IN m (1/1000 inch)
540 (21.0)
480 (19.0)
GLASS
GLASS
220 (9.0)
180 (7.0)
ANODE
190 (7.0)
160 (6.0)
60 (2.4)
40 (1.5)
250 (10.0)
200 (8.0)

Related parts for HSCH-5531

HSCH-5531 Summary of contents

Page 1

... HSCH-55XX Beam Lead Schottky Diode Pairs for Mixers and Detectors Data Sheet Description These dual beam lead diodes are constructed using a metal-semiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passiva- tion layer provides immunity from contaminants which could otherwise lead to IR drift ...

Page 2

... BR 5512 Medium 4 5531 Low Test Conditions = 10 µ Note: 1. Standard Hi-Rel program available on HSCH-5531. Others are available upon request. Typical Detector Characteristics Medium Barrier and Low Barrier (DC Bias) Parameter Symbol Tangential Sensitivity TSS γ Voltage Sensitivity Video Resistance R V Low Barrier (Zero Bias) ...

Page 3

... FORWARD VOLTAGE (V) Figure 2. Typical forward characteristics for low barrier beam lead diodes. HSCH-5531. 3 7.5 7.0 0.1 pF 6.5 0.15 pF 6.0 0.25 pF 5.5 5.0 0 9.375 FREQUENCY (GHz) Figure 3. Typical noise figure vs. frequency. ...

Page 4

... Typical Parameters, continued Figure 4. Typical Admittance Characteristics with 1 GHz 10 2 Figure 6. Typical Admittance Characteristics with Self Bias. HSCH-5512. 26 GHz Figure 5. Typical Admittance Characteristics with Figure 7. Typical Admittance Characteristics with External Bias µA 50 µA 20 150 µ GHz 2 20 µA 50 µA 150 µA ...

Page 5

... Models for Each Beam Lead Schottky Diode HSCH -5531 1 mA Self Bias 0.03 pF 0 HSCH-5512 Self Bias 0. 1.0 mA Self Bias Part Number R (Ω) R (Ω HSCH-5512 5.0 393 267 0. 1.5 mA Self Bias C (pF) R (Ω) R (Ω) C (pF 0.11 5.2 232 5 3 ...

Page 6

... Models for Each Beam Lead Schottky Diode, continued HSCH -5531 External Bias 0.03 pF 0 µA DC Bias Part Numbers R (Ω) j HSCH-5531 1400 HSCH-5512 External Bias 0. µA DC Bias Part Numbers R R (Ω HSCH-5512 2.8 1240 For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © ...

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