SD453N16S20PC Vishay, SD453N16S20PC Datasheet - Page 2

• Manufacturer Part Number: SD453N16S20PC
• Description: FAST RECOVERY DIODE, 400A 1.6KV B-8
• Manufacturer: Vishay

Specifications of SD453N16S20PC

• Repetitive Reverse Voltage Vrrm Max: 1.6V
• Forward Current If(av): 400A
• Forward Voltage Vf Max: 2.2V
• Reverse Recovery Time Trr Max: 2µs
• Diode Type: Fast Recovery
• Voltage - Forward (vf) (max) @ If: 2.2V @ 1500A
• Voltage - Dc Reverse (vr) (max): 1600V (1.6kV)
• Current - Average Rectified (io): 400A
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: *SD453N16S20PC

SD453N/R Series
Vishay High Power Products
www.vishay.com
2
CODE
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current at
case temperature
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
RECOVERY CHARACTERISTICS
S20
S30
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque ± 10 %
Approximate weight
Case style
MAXIMUM VALUE
2
2
t
t for fusing
√t for fusing
rr
AT T
AT 25 % I
(µs)
J
2.0
3.0
= 25 °C
RRM
SQUARE
PULSE
1000
(A)
I
pk
TEST CONDITIONS
SYMBOL
SYMBOL
For technical questions, contact: [e-mail]
T
V
V
I
F(RMS)
R
I
R
J
I
F(TO)1
F(TO)2
V
F(AV)
I
FSM
, T
I
2
r
r
thJC
thCS
2
FM
f1
f2
√t
t
Stg
(A/µs)
dI/dt
50
(Stud Version), 400/450 A
180° conduction, half sine wave
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I
T
(I > π x I
(16.7 % x π x I
T
(I > π x I
I
t
DC operation
Mounting surface, smooth, flat and greased
Not-lubricated threads
See dimensions (link at the end of datasheet)
Fast Recovery Diodes
pk
p
J
J
= 10 ms sinusoidal wave
= T
= T
= 1500 A, T
J
J
- 50
(V)
maximum
maximum
V
F(AV)
F(AV)
r
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
), T
), T
F(AV)
F(AV)
TEST CONDITIONS
TEST CONDITIONS
J
J
J
= T
t
= T
= T
rr
< I < π x I
< I < π x I
J
AT 25 % I
J
J
RRM
RRM
maximum,
maximum
maximum
(µs)
3.5
5.0
TYPICAL VALUES
Sinusoidal half wave,
initial T
AT T
F(AV)
F(AV)
RRM
J
),
),
J
= 150 °C
= T
J
(µC)
250
380
Q
maximum
rr
120
150
(A)
I
rr
9300
9730
7820
8190
4320
- 40 to 150
1.09
0.74
1.00
0.80
2.20
S20
400
630
432
395
306
279
VALUES
55
SD453N/R
0.04
454
0.1
50
Document Number: 93176
70
I
FM
dir
dt
10 050
9600
8070
8450
4600
0.95
1.04
0.60
0.54
1.85
S30
450
710
460
420
326
297
B-8
Revision: 08-Apr-08
52
t
rr
UNITS
K/W
Nm
I
°C
RM(REC)
g
UNITS
kA
kA
mΩ
°C
°C
A
A
A
V
V
Q
2
2
√s
s
rr
t