SD453N16S20PC Vishay, SD453N16S20PC Datasheet - Page 7

• Manufacturer Part Number: SD453N16S20PC
• Description: FAST RECOVERY DIODE, 400A 1.6KV B-8
• Manufacturer: Vishay

Specifications of SD453N16S20PC

• Repetitive Reverse Voltage Vrrm Max: 1.6V
• Forward Current If(av): 400A
• Forward Voltage Vf Max: 2.2V
• Reverse Recovery Time Trr Max: 2µs
• Diode Type: Fast Recovery
• Voltage - Forward (vf) (max) @ If: 2.2V @ 1500A
• Voltage - Dc Reverse (vr) (max): 1600V (1.6kV)
• Current - Average Rectified (io): 400A
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: *SD453N16S20PC

Document Number: 93176
Revision: 08-Apr-08
1E4
1E3
1E2
1E1
Rate Of F a ll Of Forwa rd Current - d i/ dt (A/ µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 22 - Recovery Charge Characteristics
Fig. 23 - Recovery Current Characteristics
1200
1000
550
500
450
400
350
300
250
200
150
100
800
600
400
200
50
Fig. 24 - Maximum Total Energy Loss
0
0
0
0
Per Pulse Characteristics
0.4
50 100 150 200 250 300
tp
50 100 150 200 250 300
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Pulse Basewidth (µs)
0.2
0.6
S D453N/ R ..S 30 S eries
T = 150 °C; V > 100V
S D453N/ R..S 30 S eries
T = 150 °C; V > 100V
150 A
I
S ine Pulse
J
J
0.1
FM
1
T = 150°C, V
S D453N/ R..S 20 S eries
S inusoidal Pulse
dv/ dt = 1000V/ µs
500 A
J
= 1000 A
I
S ine Pulse
2
FM
= 1000 A
4
500 A
150 A
6
For technical questions, contact: [e-mail]
r
r
RRM
1E3
10 joules per p ulse
= 800V
(Stud Version), 400/450 A
Fast Recovery Diodes
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1E2
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10000
tp
6000
Vishay High Power Products
0.4
6000
Fig. 26 - Maximum Total Energy Loss
4000
Fig. 27 - Frequency Characteristics
4000
Fig. 25 - Frequency Characteristics
3000
3000
0.6
2000
2000
S D453N/ R..S 20 S eries
T rapezoidal Pulse
T = 150°C, V
dv/ dt = 1000V/ µs; d i/ dt = 300A/ µs
1500
J
Per Pulse Characteristics
1500
0.8
1E2
1E2
1E2
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
1000
1000
1
SD453N/R Series
2
tp
RRM
600
600
4
= 800V
6
400
400
dv/ d t = 1000V/ us
S D453N/R..S 20 S eries
S inusoidal Pulse
T = 70°C, V
10 joules per pulse
C
S D453N/R..S 20 S eries
T ra pezoidal Pulse
T = 70°C, V
d v/ dt = 1000V/us,
d i/ dt = 300A/ us
1E3
1E3
C
1E3
200
200
RRM
100
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100
RRM
= 800V
tp
= 800V
50 Hz
50 Hz
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