SD453N25S20PC Vishay, SD453N25S20PC Datasheet - Page 2
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SD453N25S20PC
Manufacturer Part Number
SD453N25S20PC
Description
FAST RECOVERY DIODE, 400A 2.5KV B-8
Manufacturer
Vishay
Specifications of SD453N25S20PC
Repetitive Reverse Voltage Vrrm Max
2.5kV
Forward Current If(av)
400A
Forward Voltage Vf Max
2.2V
Reverse Recovery Time Trr Max
2µs
Diode Type
Fast Recovery
Voltage - Forward (vf) (max) @ If
2.2V @ 1500A
Voltage - Dc Reverse (vr) (max)
2500V (2.5kV)
Current - Average Rectified (io)
400A
Current - Reverse Leakage @ Vr
50mA @ 2500V
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2µs
Mounting Type
Chassis, Stud Mount
Package / Case
B-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*SD453N25S20PC
SD453N/R Series
Bulletin I2076 rev. A 09/94
Forward Conduction
2
Recovery Characteristics
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
I
I
I
I
V
V
r
r
V
Type number
SD453N/R
F(AV)
F(RMS)
FSM
2
2
f
f
Code
S20
S30
1
2
t
F(TO)1
F(TO)2
FM
t
Max. average forward current
@ case temperature
Max. RMS forward current
@ case temperature
Max. peak, one-cycle forward,
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold
voltage
High level value of threshold
voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Max. forward voltage drop
Parameter
@ 25% I
T
typical t
J
= 25
( s)
2.0
3.0
Voltage
RRM
o
2
2
C
rr
Code
t for fusing
t for fusing
12
16
20
25
Square Pulse
1000
1000
I
(A)
pk
Test conditions
V
RRM
peak reverse voltage
(A/ s)
, maximum repetitive
di/dt
50
50
9300
9730
7820
8190
4320
1.00
1.09
0.74
S20
0.80
2.20
400
630
432
395
306
279
70
55
1200
1600
2000
2500
SD453N/R
V
- 50
- 50
(V)
V
r
10050
0.95
1.04
0.54
9600
8070
8450
4600
0.60
1.85
S30
450
710
460
420
326
297
70
52
Max. values @ T
@ 25% I
( s)
3.5
5.0
t
rr
KA
RRM
KA
Units Conditions
m
°C
°C
A
V
A
A
V
2
2
s
s
( C)
250
380
Q
repetitive peak rev. voltage
180° conduction, half sine wave
t = 10ms
t = 8.3ms
t = 10ms
(16.7% x
(I >
(I >
t = 10ms
t = 8.3ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 0.1 to 10ms, no voltage reapplied
(16.7% x
I
pk
rr
J
V
= 1500A, T
= 150 °C
RSM
x I
x I
120
150
(A)
I
rr
, maximum non-
F(AV)
F(AV)
x I
x I
1300
1700
2100
2600
No voltage
reapplied
100% V
reapplied
No voltage
reapplied
100% V
reapplied
),T
),T
J
V
F(AV)
F(AV)
= T
J
J
= T
= T
J
< I <
< I <
max, t
RRM
RRM
J
J
max.
max.
p
Sinusoidal half wave,
Initial T
x I
x I
= 10ms sinusoidal wave
F(AV)
F(AV)
), T
), T
J
@ T
= T
www.irf.com
J
J
I
= T
= T
RRM
J
J
max.
= T
mA
50
J
J
max.
max.
max.
J
max.