SD453N25S20PC Vishay, SD453N25S20PC Datasheet - Page 8
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SD453N25S20PC
Manufacturer Part Number
SD453N25S20PC
Description
FAST RECOVERY DIODE, 400A 2.5KV B-8
Manufacturer
Vishay
Specifications of SD453N25S20PC
Repetitive Reverse Voltage Vrrm Max
2.5kV
Forward Current If(av)
400A
Forward Voltage Vf Max
2.2V
Reverse Recovery Time Trr Max
2µs
Diode Type
Fast Recovery
Voltage - Forward (vf) (max) @ If
2.2V @ 1500A
Voltage - Dc Reverse (vr) (max)
2500V (2.5kV)
Current - Average Rectified (io)
400A
Current - Reverse Leakage @ Vr
50mA @ 2500V
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2µs
Mounting Type
Chassis, Stud Mount
Package / Case
B-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*SD453N25S20PC
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
SD453N/R Series
Bulletin I2076 rev. A 09/94
8
Fig. 21 - Recovery Time Characteristics
5.5
4.5
3.5
2.5
Fig. 18 - Recovery Time Characteristics
6.5
5.5
4.5
3.5
2.5
Fig. 24 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E3
1E2
6
5
4
3
2
7
6
5
4
3
2
10
10
1E1
SD453N/R..S30 Series
T = 150 °C, V > 100V
SD453N/R..S20 Series
T = 150 °C; V > 100V
J
J
I
Sine Pulse
FM
100
100
0.4
tp
= 1000 A
I
Sine Pulse
1E2
FM
0.2
Pulse Basewidth (µs)
0.6
500 A
150 A
= 1000 A
0.1
r
r
1
500 A
150 A
SD453N/R..S20 Series
Sinusoidal Pulse
T = 150°C, V
dv/dt = 1000V/µs
J
2
1000
1000
4
6
RRM
1E3
10 joules per pulse
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
= 800V
Fig. 22 - Recovery Charge Characteristics
1200
1000
Fig. 19 - Recovery Charge Characteristics
800
700
600
500
400
300
200
100
800
600
400
200
0
0
0
0
50 100 150 200 250 300
50 100 150 200 250 300
1E4
SD453N/R..S20 Series
T = 150 °C; V > 100V
SD453N/R..S30 Series
T = 150 °C; V > 100V
J
J
I
Sine Pulse
I
Sine Pulse
FM
FM
= 1000 A
= 1000 A
1E4
1E3
1E2
500 A
150 A
500 A
150 A
r
r
1E1
10000
6000
4000
Fig. 25 - Frequency Characteristics
3000
2000
1500
Rate Of Fall Of F orward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 23 - Recovery Current Characteristics
Fig. 20 - Recovery Current Characteristics
1E2
550
500
450
400
350
300
250
200
150
100
Pulse Basewidth (µs)
450
400
350
300
250
200
150
100
50
50
1000
0
0
0
0
tp
600
50 100 150 200 250 300
50 100 150 200 250 300
SD453N/R..S30 Series
T = 150 °C; V > 100V
I
Sine Pulse
150 A
SD453N/R..S20 Series
T = 150 °C; V > 100V
150 A
400
FM
I
Sine Pulse
dv/dt = 1000V/us
J
SD453N/R..S20 Series
Sinusoidal Pulse
T = 70°C, V
J
FM
C
500 A
= 1000 A
500 A
1E3
= 1000 A
200
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RRM
100
r
r
= 800V
50 Hz
1E4