BAS16 NXP Semiconductors, BAS16 Datasheet - Page 3

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BAS16

Manufacturer Part Number
BAS16
Description
DIODE, SWITCHING, SOT-23, 85V, 215MA
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS16

Diode Type
Small Signal
Forward Current If(av)
215mA
Repetitive Reverse Voltage Vrrm Max
85V
Forward Voltage Vf Max
1.25V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
2001 Oct 10
V
I
C
t
V
R
R
SYMBOL
SYMBOL
j
R
rr
F
fr
= 25 C unless otherwise specified.
d
th j-tp
th j-a
High-speed diode
forward voltage
reverse current
diode capacitance
reverse recovery time
forward recovery voltage
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
I
when switched from I
see Fig.8
R
R
I
I
I
I
V
V
V
V
= 10 mA; R
= 1 mA; see Fig.7
F
F
F
F
R
R
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
= 25 V
= 75 V
= 25 V; T
= 75 V; T
note 1
3
R
L
= 0; see Fig.6
j
j
= 100 ; measured at
CONDITIONS
= 150 C
= 150 C
CONDITIONS
F
F
= 10 mA to
= 10 mA; t
r
= 20 ns;
715
855
1
1.25
30
1
30
50
1.5
4
1.75
Product specification
VALUE
MAX.
330
500
BAS16
mV
mV
V
V
nA
pF
ns
V
A
A
A
UNIT
UNIT
K/W
K/W

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