BAT54S.215 NXP Semiconductors, BAT54S.215 Datasheet - Page 4
BAT54S.215
Manufacturer Part Number
BAT54S.215
Description
DIODE, SCHOTTKY, REEL 3K
Manufacturer
NXP Semiconductors
Datasheet
1.BAT54S.215.pdf
(8 pages)
Specifications of BAT54S.215
Diode Type
Schottky
Forward Current If(av)
200mA
Repetitive Reverse Voltage Vrrm Max
30V
Forward Voltage Vf Max
800mV
Reverse Recovery Time Trr Max
5ns
Forward Surge Current Ifsm Max
600mA
Operating
RoHS Compliant
handbook, halfpage
Philips Semiconductors
2002 Mar 04
handbook, halfpage
Schottky barrier (double) diodes
(mA)
(1) T
(2) T
(3) T
Fig.3
f = 1 MHz; T
Fig.5
I F
10
(pF)
C d
10
10
10
15
10
1
0
5
amb
amb
amb
3
2
1
0
0
(1)
= 125 C.
= 85 C.
= 25 C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
amb
(2)
= 25 C.
(3)
10
0.4
(1)
(2)
20
0.8
(3)
V R (V)
V F (V)
MSA891
MSA892
30
1.2
4
handbook, halfpage
I F
I R
(1) T
(2) T
(3) T
Fig.4
( A)
I R
10
10
10
10
amb
amb
amb
1
3
2
1
0
= 125 C.
= 85 C.
= 25 C.
Reverse current as a function of reverse
voltage; typical values.
Fig.6 Reverse recovery definitions.
dI
dt
F
Q
r
10
t f
BAT54 series
20
Product specification
V
R
(1)
(2)
(3)
(V)
MSA893
MRC129 - 1
10%
90%
30
t