BAW56 T/R NXP Semiconductors, BAW56 T/R Datasheet - Page 3

SWITCHING DIODE, 90V, 215mA, SOT-23

BAW56 T/R

Manufacturer Part Number
BAW56 T/R
Description
SWITCHING DIODE, 90V, 215mA, SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAW56 T/R

Diode Type
Small Signal
Forward Current If(av)
215mA
Repetitive Reverse Voltage Vrrm Max
90V
Forward Voltage Vf Max
1.25V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
3. Ordering information
4. Marking
5. Limiting values
BAV756S_BAW56_SER_5
Product data sheet
Table 4.
Table 5.
[1]
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Type number
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
Type number
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
Symbol
Per diode
V
V
I
F
RRM
R
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Ordering information
Marking codes
Limiting values
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
Package
Name
SC-88
-
SC-101
SC-88
SC-75
SC-70
Rev. 05 — 26 November 2007
Description
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands;
body 1.0
plastic surface-mounted package; 6 leads
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 3 leads
BAV756S; BAW56 series
0.6
Conditions
T
T
T
T
T
T
s
amb
amb
s
s
amb
= 60 C
= 60 C
= 90 C
0.5 mm
Marking code
A7*
A1*
S5
A1*
A1
A1*
25 C
25 C
25 C
High-speed switching diodes
[1]
Min
-
-
-
-
-
-
-
-
© NXP B.V. 2007. All rights reserved.
Max
90
90
250
215
150
250
150
150
Version
SOT363
SOT23
SOT883
SOT363
SOT416
SOT323
Unit
V
V
mA
mA
mA
mA
mA
mA
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