BLA6H1011-600 NXP Semiconductors, BLA6H1011-600 Datasheet - Page 2

• Manufacturer Part Number: BLA6H1011-600
• Description: LDOMS,RF,600W,1030M-1090MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLA6H1011-600

• Drain Source Voltage Vds: 100V
• Continuous Drain Current Id: 72A
• Operating Frequency Range: 960MHz To 1.215GHz / 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-539A
• No. Of Pi: RoHS Compliant
• Transistor Type: RF MOSFET

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
5. Thermal characteristics
BLA6H1011-600_1
Product data sheet
1.3 Applications
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Table 5.
Pin
1
2
3
4
5
Type number
BLA6H1011-600 -
Symbol
V
V
I
T
Symbol
Z
T
D
stg
j
th(j-case)
DS
GS
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the
1030 MHz to 1090 MHz frequency range
Connected to flange.
Parameter
transient thermal impedance from
junction to case
Pinning
Ordering information
Limiting values
Thermal characteristics
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain1
drain2
gate1
gate2
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
Rev. 01 — 22 April 2010
Description
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
Conditions
[1]
Conditions
T
Simplified outline
case
t
t
p
p
= 100 μs; δ = 10 %
= 50 μs; δ = 2 %
LDMOS avionics power transistor
= 85 °C; P
BLA6H1011-600
1
3
2
4
L
= 600 W
5
Graphic symbol
-
Min
-
0.5
-
−65
© NXP B.V. 2010. All rights reserved.
3
4
Max
100
13
72
+150
200
Typ
0.06
0.035 K/W
Version
SOT539A
1
2
sym117
2 of 13
5
Unit
K/W
Unit
V
V
A
°C
°C