BLF573 NXP Semiconductors, BLF573 Datasheet - Page 8

• Manufacturer Part Number: BLF573
• Description: LDMOS,RF,300W,HF-500MHZ,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF573

• Drain Source Voltage Vds: 50V
• Continuous Drain Current Id: 42A
• Operating Frequency Range: 108MHz To 225MHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
Table 9.
For production test circuit, see
Printed-Circuit Board (PCB): Rogers 5880;
thickness copper plating = 35
BLF573_BLF573S
Product data sheet
Component
B1
C1, C18
C2
C3, C4
C5, C6, C7
C8, C20
C9
C10
C11, C12, C13 multilayer ceramic chip capacitor
C14
Fig 7.
(dB)
G
p
30
28
26
24
22
0
V
f
Power gain and drain efficiency as functions
of peak envelope load power; typical values
2
DS
List of components
= 225.05 MHz.
= 50 V; I
8.1.2 2-Tone CW
Description
ferrite SMD bead
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
100
8.2 Test circuit
G
η
D
p
Dq
= 900 mA; f
200
μ
Figure 9
m.
300
1
= 224.95 MHz;
and
400
P
All information provided in this document is subject to legal disclaimers.
ε
L(PEP)
001aaj615
Figure
r
= 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
(W)
500
10.
80
60
40
20
0
Rev. 3 — 8 July 2010
Value
100 Ω; 100 MHz
100 pF
39 pF
180 pF
220 pF
1 nF
4.7 μF
30 pF
51 pF
43 pF
(%)
η
D
Fig 8.
IMD3
(dBc)
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
−20
−40
−60
−80
0
0
V
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Dq
Dq
Dq
Dq
Dq
Dq
Dq
Dq
DS
= 500 mA
= 700 mA
= 900 mA
= 1100 mA
= 1300 mA
= 1500 mA
= 1700 mA
= 1800 mA
Remarks
Ferroxcube BDS3/3/8.9-4S2 or equivalent
TDK C4532X7R1E475MT020U or equivalent
= 50 V; f
(8)
(7)
(6)
100
BLF573; BLF573S
HF / VHF power LDMOS transistor
1
= 224.95 MHz; f
200
(1)
(2)
(3)
(4)
(5)
300
2
= 225.05 MHz.
© NXP B.V. 2010. All rights reserved.
400
P
L(PEP)
001aaj616
(W)
500
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