BLF871 NXP Semiconductors, BLF871 Datasheet - Page 6
![LDMOS,RF,100W,UHF,50V](/photos/41/53/415354/sot467c_3d_sml.gif)
BLF871
Manufacturer Part Number
BLF871
Description
LDMOS,RF,100W,UHF,50V
Manufacturer
NXP Semiconductors
Datasheet
1.BLF871112.pdf
(19 pages)
Specifications of BLF871
Drain Source Voltage Vds
89V
Continuous Drain Current Id
3.7A
Operating Frequency Range
108MHz To 225MHz
Rf Transistor Case
SOT-467C
No. Of Pins
2
Transistor Type
RF MOSFET
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
89V
Output Power (max)
100W(Typ)
Power Gain (typ)@vds
21@40V/21@40V/22@40VdB
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
3
Drain Source Resistance (max)
210(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
95@40VpF
Output Capacitance (typ)@vds
30@40VpF
Reverse Capacitance (typ)
1@40VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/DVB-T
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF871
Manufacturer:
ROHM
Quantity:
12 000
Company:
Part Number:
BLF871,112
Manufacturer:
UMS
Quantity:
1 400
Company:
Part Number:
BLF871S
Manufacturer:
TOSHIBA
Quantity:
5 000
Company:
Part Number:
BLF871S112
Manufacturer:
NXP Semiconductors
Quantity:
135
NXP Semiconductors
BLF871_BLF871S_4
Product data sheet
Fig 5.
(dB)
G
p
24
22
20
18
0
V
narrowband 860 MHz test circuit.
DVB-T power gain and drain efficiency as
functions of average load power; typical
values
DS
= 40 V; I
7.1.3 DVB-T
G
η
D
p
Dq
20
= 0.5 A; measured in a common source
40
P
L(AV)
001aaj280
(W)
Rev. 04 — 19 November 2009
60
60
40
20
0
(%)
η
D
Fig 6.
IMD3
(dBc)
(1) Low frequency component
(2) High frequency component
−15
−25
−35
−45
−55
0
V
narrowband 860 MHz test circuit.
DVB-T third order intermodulation distortion
as a function of average load power; typical
values
DS
= 40 V; I
BLF871; BLF871S
Dq
20
= 0.5 A; measured in a common source
(1)
(2)
UHF power LDMOS transistor
40
P
L(AV)
© NXP B.V. 2010. All rights reserved.
001aaj281
(W)
60
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