BLF881 NXP Semiconductors, BLF881 Datasheet - Page 9

• Manufacturer Part Number: BLF881
• Description: LDMOS,RF,140W,UHF,50V
• Manufacturer: NXP Semiconductors

Specifications of BLF881

• Drain Source Voltage Vds: 104V
• Continuous Drain Current Id: 3.7A
• Operating Frequency Range: 858MHz To 860MHz
• Rf Transistor Case: SOT-467C
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
8. Test information
Table 8.
For test circuit, see
[1]
[2]
[3]
[4]
BLF881_BLF881S
Product data sheet
Component
C1, C2
C3, C4
C5
C6
C7
C8, C9, C10, C25,
C26
C11, C27
C12
C20
C21
C22
C23
C24
L1
L2
L3
L4
L5
L6
L7
L20
L21
L22
L23
R1
R2
American technical ceramics type 100B or capacitor of same quality.
American technical ceramics type 180R or capacitor of same quality.
American technical ceramics type 100A or capacitor of same quality.
Printed-Circuit Board (PCB): Rogers 5880; ε
thickness copper plating = 35 μm.
List of components
Figure
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
trimmer
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
resistor
resistor
10,
Figure 11
and
All information provided in this document is subject to legal disclaimers.
r
Figure
= 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
Rev. 3 — 7 December 2010
12.
Value
5.1 pF
10 pF
6.8 pF
4.7 pF
2.7 pF
100 pF
10 μF
470 μF; 63 V
10 pF
8.2 pF
0.6 pF to 4.5 pF
6.8 pF
3.9 pF
-
-
-
-
-
-
-
-
-
-
-
100 Ω
10 kΩ
BLF881; BLF881S
[1]
[2]
[1]
[1]
[1]
[1]
[3]
[3]
[3]
[3]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
Remarks
TDK C570X7R1H106KT000N or
capacitor of same quality.
Tekelec
(W × L) 7 mm × 15 mm
(W × L) 2.4 mm × 9 mm
(W × L) 2.4 mm × 10 mm
(W × L) 2.4 mm × 25 mm
(W × L) 2.4 mm × 10 mm
(W × L) 2.0 mm × 20 mm
(W × L) 2.0 mm × 21 mm
(W × L) 7 mm × 12 mm
(W × L) 2.4 mm × 13 mm
(W × L) 2.4 mm × 31 mm
(W × L) 2.4 mm × 5 mm
UHF power LDMOS transistor
© NXP B.V. 2010. All rights reserved.
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