BLS6G2731-120 NXP Semiconductors, BLS6G2731-120 Datasheet - Page 5

• Manufacturer Part Number: BLS6G2731-120
• Description: LDMOS,RF,120W,2700M-3100MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G2731-120

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 33A
• Operating Frequency Range: 1.2GHz To 1.4GHz
• Rf Transistor Case: SOT-502A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
BLS6G2731-120_6G2731S-120_1
Product data sheet
Fig 2. Power gain as a function of load power; typical
Fig 4. Drain efficiency as a function of load power;
(dB)
(%)
G
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
D
p
15
13
11
60
40
20
9
7
0
values
typical values
0
0
V
V
DS
DS
= 32 V; I
= 32 V; I
7.2 Graphs
40
40
Dq
Dq
= 100 mA; t
= 100 mA; t
(1)
(3)
(2)
80
80
(1)
(2)
(3)
p
p
= 300 s; = 10 %.
= 300 s; = 10 %.
120
120
BLS6G2731-120; BLS6G2731S-120
P
P
001aaj091
001aaj093
L
L
(W)
(W)
Rev. 01 — 14 November 2008
160
160
Fig 3. Power gain as a function of load power; typical
Fig 5. Drain efficiency as a function of load power;
(dB)
(%)
G
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
(1) f = 2.7 GHz
(2) f = 2.9 GHz
(3) f = 3.1 GHz
D
p
15
13
11
60
40
20
9
7
0
values
typical values
0
V
0
V
DS
DS
= 32 V; I
= 32 V; I
LDMOS S-band radar power transistor
40
40
Dq
Dq
= 100 mA; t
= 100 mA; t
(1)
(3)
(2)
80
80
p
p
= 100 s;
= 100 s;
(1)
(2)
(3)
120
120
© NXP B.V. 2008. All rights reserved.
P
P
001aaj092
001aaj094
L
L
(W)
(W)
= 20 %.
= 20 %.
160
160
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