DF1000R17IE4 Infineon Technologies, DF1000R17IE4 Datasheet - Page 7

• Manufacturer Part Number: DF1000R17IE4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of DF1000R17IE4

• Module Configuration: Chopper
• Transistor Polarity: N Channel
• Dc Collector Current: 1000A
• Collector Emitter Voltage Vces: 1.7kV
• Power Dissipation Pd: 6.25kW
• No. Of Pins: 12
• Collector Emitter Saturation Voltage Vce(sat): 2V
• Rohs Compliant: Yes
• Ic (max): 1,000.0 A
• Vce(sat) (typ): 2.0 V
• Configuration: chopper
• Technology: IGBT4
• Housing: PrimePACK™ 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
:^\o ) O+mQ
:^\o ) O+mQ
2
2
•HWh& ) O Q
•HWh& ) O Q
:^\o ) O+mQ
:^\o ) O+mQ
2
2
•HWh& ) O Q
•HWh& ) O Q
4
4
4
4
U-, )
U-, )
U-, )
U-, )
3
3
3
3
350
300
250
200
150
100
100
3 #
3 #
3 #
3 #
50
10
0
1
0,001
0 200 400 600 800 1000 1200 1400 1600 1800 2000
3 3 3 3
[R !&' )
[R !&' )
[R !&' )
[R !&' )
9"
9"
9"
9"
$
$
$
$
:^\oR 2<= ) D E7
:^\oR 2<= )
•HWh& $
0,01
4
4
4
4
9
9
9
9
!
!
!
!
3
3
DE7
3
3
ZvK%69x
Zv x
+m v/x
$
$
$
$
0,1
O
O
O
O
O
O
O
O
v x
R
DF1000R17IE4
9
9
9
9
Q
Q
Q
Q
3Q
3Q
3Q
3Q
R
3
3
3
3
RD
1
R D
J
RD
RN
10
7
:^\o ) O UQ
:^\o ) O UQ
:^\o ) O UQ
:^\o ) O UQ
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C27 2
C27 2
C27 2
C27 2
C27
C27
C27
C27
4
4
100000
4
4
10000
) O2Q
) O2Q
) O2Q
) O2Q
3
3
3
3
1000
350
300
250
200
150
100
100
3 #
3 #
3 #
3 #
50
0
0
0
/R !&' )
/R !&' )
/R !&' )
/R !&' )
1
20
$
$
$
$
:^\oR 2<= ) D E7
:^\oR 2<= )
H‚>
6
6
6
6
2
3
3
3
3
40
9
9
9
9
!
!
!
!
3
60
3
3
DE7
3
3
O
O
O
O
4
2& vE7x
O
O
O
O
U v[x
80
O
O
O
O
O
O
O
O
Vorläufige Daten
preliminary data
3Q
3Q
3Q
3Q
5
100 120 140 160
Q
Q
Q
Q
3Q
3Q
3Q
3Q
Q
Q
Q
Q
6
7
8
9