DF900R12IP4D Infineon Technologies, DF900R12IP4D Datasheet - Page 8

• Manufacturer Part Number: DF900R12IP4D
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of DF900R12IP4D

• Module Configuration: Chopper
• Transistor Polarity: N Channel
• Dc Collector Current: 900A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 5.1kW
• No. Of Pins: 10
• Collector Emitter Saturation Voltage Vce(sat): 1.7V
• Rohs Compliant: Yes
• Ic (max): 900.0 A
• Vce(sat) (typ): 1.7 V
• Configuration: chopper
• Technology: IGBT4
• Housing: PrimePACK™2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
DF900R12IP4D
8
Vorläufige Daten
preliminary data