FP35R12W2T4 Infineon Technologies, FP35R12W2T4 Datasheet - Page 5
FP35R12W2T4
Manufacturer Part Number
FP35R12W2T4
Description
IGBT Module
Manufacturer
Infineon Technologies
Datasheet
1.FP35R12W2T4.pdf
(12 pages)
Specifications of FP35R12W2T4
Transistor Polarity
N Channel
Dc Collector Current
35A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
215W
No. Of Pins
23
Collector Emitter Saturation Voltage Vce(sat)
1.85V
Channel Type
N
Configuration
Hex
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Rohs Compliant
Yes
Packages
AG-EASY2B-1
Ic (max)
35.0 A
Vce(sat) (typ)
1.85 V
Technology
IGBT4
Housing
EasyPIM 2B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FP35R12W2T4
Manufacturer:
INFINEON
Quantity:
102
Part Number:
FP35R12W2T4
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FP35R12W2T4
Quantity:
98
Part Number:
FP35R12W2T4-B11
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FP35R12W2T4_B11
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
Diode-Brems-Chopper / Diode-brake-chopper
Höchstzulässige Werte / maximum rated values
Charakteristische Werte / characteristic values
NTC-Widerstand / NTC-thermistor
Charakteristische Werte / characteristic values
Angaben gemäß gültiger Application Note.
Specification according to the valid application note.
FP35R12W2T4
5
Vorläufige Daten
preliminary data