FZ1000R33HL3 Infineon Technologies, FZ1000R33HL3 Datasheet
FZ1000R33HL3
Manufacturer Part Number
FZ1000R33HL3
Description
IGBT Module
Manufacturer
Infineon Technologies
Datasheet
1.FZ1000R33HL3.pdf
(9 pages)
Specifications of FZ1000R33HL3
Module Configuration
Single
Transistor Polarity
N Channel
Dc Collector Current
1000A
Collector Emitter Voltage Vces
3.3kV
Power Dissipation Pd
9.6kW
No. Of Pins
7
Collector Emitter Saturation Voltage Vce(sat)
2.4V
Channel Type
N
Configuration
Dual
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Rohs Compliant
Yes
Ic (max)
1,000.0 A
Vce(sat) (typ)
2.4 V
Technology
IGBT3 Low Loss
Housing
IHV B 130 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FZ1000R33HL3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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FZ1000R33HL3 Summary of contents
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