2MBI150U4A-120-50 FUJI ELECTRIC, 2MBI150U4A-120-50 Datasheet - Page 9

• Manufacturer Part Number: 2MBI150U4A-120-50
• Description: DUAL IGBT MODULE 150A 1200V TRENCH
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI150U4A-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 200A
• Collector Emitter Voltage Vces: 2.3V
• Power Dissipation Max: 735W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100.0
400
300
200
100
10.0
400
300
200
100
1.0
0.1
0
0
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
VGE=0V, f=1MHz, Tj=25
1
1
VGE=20V
VGE=15V / chip
10
Tj=25
Tj=25
2
2
o
o
C / chip
C
15V
3
3
Tj=125
20
12V
o
C
o
C
4
4
Cies
Cres
Coes
10V
8V
30
5
5
10
400
300
200
100
8
6
4
2
0
0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
0
5
0
MS5F6031
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
200
1
10
Gate-Emitter voltage : VGE [ V ]
Vcc=600V, Ic=150A, Tj=25
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj=125
Tj=25
2
VGE=20V
400
15
o
o
C / chip
C / chip
VCE
VGE
3
15V
600
20
o
C
H04-004-03a
Ic=300A
Ic=150A
Ic=75A
9
4
10V
13
12V
8V
800
25
5