GT15Q102 Toshiba, GT15Q102 Datasheet - Page 3

• Manufacturer Part Number: GT15Q102
• Description: IGBT, 1200V, TO-3P(N)
• Manufacturer: Toshiba

Specifications of GT15Q102

• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 170W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 15A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Power Dissipation Pd: 170W
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Not Compliant

50
40
30
20
10
20
16
12
50
40
30
20
10
0
8
4
0
0
0
0
0
Common emitter
V CE = 5 V
Common emitter
Tc = 25°C
Collector-emitter voltage V
4
Gate-emitter voltage V
Gate-emitter voltage V
1
4
Tc = 125°C
I C = 6 A
V
8
2
8
I
I
CE
C
C
25
– V
– V
– V
20
CE
GE
GE
15
12
12
−40
3
15
30
GE
GE
Common emitter
Tc = 25°C
CE
(V)
(V)
16
V GE = 9 V
16
4
(V)
10
20
20
5
3
20
16
12
20
16
12
4
3
2
1
0
−60
8
4
0
8
4
0
0
0
Common emitter
V GE = 15 V
Common emitter
Tc = 125°C
Common emitter
Tc = −40°C
−20
Gate-emitter voltage V
Gate-emitter voltage V
4
4
Case temperature Tc (°C)
I C = 6 A
I C = 6 A
V
V
V
20
CE (sat)
8
8
CE
CE
– V
– V
15
GE
– Tc
GE
12
12
60
30
GE
GE
30
15
(V)
(V)
I C = 6 A
100
16
16
GT15Q102
30
15
2006-11-01
140
20
20