GT15Q102 Toshiba, GT15Q102 Datasheet - Page 2

• Manufacturer Part Number: GT15Q102
• Description: IGBT, 1200V, TO-3P(N)
• Manufacturer: Toshiba

Specifications of GT15Q102

• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Max: 170W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 15A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-3PN
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Power Dissipation Pd: 170W
• Rohs Compliant: Yes
• Lead Free Status / Rohs Status: Not Compliant

Electrical Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Switching time
Thermal resistance
Note1: Switching time measurement circuit and input/output waveforms
Note2: Switching loss measurement waveforms
V
0
0
GE
GT15Q301
Characteristic
V
V
I
GE
CE
C
R
G
I
Turn-on time
Turn-off time
C
Rise time
Fall time
90%
E
L
off
V
V
CE
(Ta
CC
V
V
Symbol
GE (OFF)
R
CE (sat)
I
I
C
th (j-c)
25°C)
GES
CES
t
t
on
off
t
t
ies
r
f
10%
0
0
V
V
I
I
V
Inductive Load
V
V
C
C
GE
CE
CE
CC
GG
V
V
1.5 mA, V
15 A, V
I
GE
E
CE
C
1200 V, V
50 V, V
on
600 V, I
2
20 V, V
15 V, R
GE
t
Test Condition
10%
d (off)
GE
10%
CE
C
CE
G
GE
15 V
15 A
0, f
5 V
56
90%
t
0
off
0
t
f
1 MHz
90%
10%
(Note1)
Min
10%
10%
4.0
t
d (on)
Typ.
0.05
0.12
0.16
0.56
850
2.1
t
t
on
r
90%
GT15Q102
2002-01-18
0.32
0.74
Max
1.0
7.0
2.7
500
10%
°C/W
Unit
mA
nA
pF
V
V
s