2N4117A-E3 Vishay, 2N4117A-E3 Datasheet - Page 2

• Manufacturer Part Number: 2N4117A-E3
• Description: N CHANNEL JFET, -70V, TO-206AF
• Manufacturer: Vishay

Specifications of 2N4117A-E3

• Breakdown Voltage Vbr: -70V
• Gate-source Cutoff Voltage Vgs(off) Max: -1.8V
• Power Dissipation Pd: 300mW
• Operating Temperature Range: -55°C To +175°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 300 mW
• Package / Case: TO-206AF
• Gate-source Breakdown Voltage: - 40 V
• Maximum Operating Temperature: + 175 C
• Maximum Drain Gate Voltage: - 40 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2N/PN/SST4117A Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage
Forward Gate Current
Storage Temperature :
Operating Junction Temperature :
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
G t R
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Common-Source
Input Capacitance
Common-Source
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
This parameter not registered with JEDEC.
Parameter
C
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
t
b
(2N Prefix)
(PN, SST Prefix)
(2N Prefix)
(PN, SST Prefix)
b
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
= 25_C UNLESS OTHERWISE NOTED)
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . .
Symbol
V
V
V
(BR)GSS
I
I
I
GS(off)
I
C
C
D(off)
C
C
GS(F)
DSS
GSS
g
g
e
I
G
os
i
iss
rss
. . . . . . . . . . . . .
. . . . . . . . . . . . .
fs
n
V
V
V
V
V
T
V
V
T
V
V
V
V
V
V
V
V
V
V
V
−65 to 175_C
−55 to 150_C
−55 to 175_C
−55 to 150_C
I
f = 1 MHz
f = 1 MHz
Test Conditions
GS
GS
GS
GS
GS
I
V
A
G
A
DS
G
DS
DG
DS
DS
DS
DS
DS
DS
DS
GS
GS
DS
DS
= 100_C
= 150_C
= −1 mA , V
= 1 mA , V
= −20 V
= −20 V
= −10 V
= −10 V
= −10 V
= 10 V, V
= 10 V
= 10 V, V
= 0 V
= 0 V
= 0 V
= 0 V
= 15 V, I
= 10 V, V
= 10 V, V
= 0 V
= 0 V
= 10 V, V
= 10 V, I
50 mA
f = 1 kHz
f = 1 kHz
−40V
D
GS
D
DS
GS
GS
GS
GS
DS
= 30 mA
= 1 nA
= −8 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V
PN/SST
2N/PN
2N/PN
SST
SST
SST
2N
PN
Lead Temperature (
Power Dissipation (case 25_C) :
Notes
a.
b.
Derate 2 mW/_C above 25_C
Derate 2.8 mW/_C above 25_C
Typ
−0.03
−0.2
−0.4
−0.2
−0.2
−0.2
−70
0.2
0.7
1.2
1.2
0.3
0.3
15
a
Min
1
−0.6
−40
/
30
70
16
” from case for 10 sec.)
4117
Max
−1.8
−2.5
−2.5
−10
210
1.5
(2N Prefix)
(PN, SST Prefix)
90
−1
−1
3
3
Min
−
−1
80
80
40
Limits
a
4118
. . . . . . . . . . . . . . . . . . . . . .
Max
−2.5
−2.5
b
240
−10
250
1.5
−3
−1
−1
5
3
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . .
S-41231—Rev. G, 28-Jun-04
Document Number: 70239
Min
−40
200
100
−2
4119
Max Unit
−2.5
−2.5
600
−10
330
1.5
−6
−1
−1
10
3
300 mW
350 mW
300_C
√Hz
nV⁄
mA
pA
nA
pA
pA
nA
pA
pA
mS
mS
pF
pF
V
V
V
NT