2N4117A-E3 Vishay, 2N4117A-E3 Datasheet - Page 4

• Manufacturer Part Number: 2N4117A-E3
• Description: N CHANNEL JFET, -70V, TO-206AF
• Manufacturer: Vishay

Specifications of 2N4117A-E3

• Breakdown Voltage Vbr: -70V
• Gate-source Cutoff Voltage Vgs(off) Max: -1.8V
• Power Dissipation Pd: 300mW
• Operating Temperature Range: -55°C To +175°C
• No. Of Pins: 3
• Leaded Process Compatible: Yes
• Configuration: Single
• Transistor Polarity: N-Channel
• Power Dissipation: 300 mW
• Package / Case: TO-206AF
• Gate-source Breakdown Voltage: - 40 V
• Maximum Operating Temperature: + 175 C
• Maximum Drain Gate Voltage: - 40 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

2N/PN/SST4117A Series
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (T
100
500
400
300
200
100
100
80
60
40
20
80
60
40
20
0
0
0
0.01
0
0
T
125_C
Circuit Voltage Gain vs. Drain Current
Assume V
A
A
R
V
= −55_C
L
V
V
GS(off)
GS(off)
−0.2
+
+
−55_C
−1
V
GS(off)
T
1 ) R
10 V
V
V
Transfer Characteristics
Transfer Characteristics
A
I
= −0.7 V
GS
GS
D
= −2.5 V
DD
g
= 125_C
25_C
I
fs
D
− Gate-Source Voltage (V)
− Gate-Source Voltage (V)
= −0.7 V
= 15 V, V
R
− Drain Current (mA)
L
−0.4
L
g
−2
os
0.1
25_C
DS
= 5 V
−2.5 V
−0.6
−3
V
V
DS
DS
= 10 V
= 10 V
−0.8
A
−4
= 25_C UNLESS OTHERWISE NOTED)
−1.0
−5
1
200
160
120
300
240
180
120
2.0
1.6
1.2
0.8
0.4
80
40
60
0
0
0
0
0
0
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltage
125_C
f = 1 MHz
Common-Source Input Capacitance
125_C
V
T
V
A
−0.2
GS(off)
T
GS(off)
−1
= −55_C
−4
A
= −55_C
V
V
V
V
vs. Gate-Source Voltage
GS
GS
DS
GS
= −0.7 V
= −2.5 V
= 0 V
− Gate-Source Voltage (V)
− Gate-Source Voltage (V)
− Gate-Source Voltage (V)
25_C
−0.4
−2
−8
25_C
10 V
−0.6
−3
−12
S-41231—Rev. G, 28-Jun-04
Document Number: 70239
V
f = 1 kHz
V
f = 1 kHz
DS
DS
−0.8
= 10 V
= 10 V
−16
−4
−1.0
−20
−5