2N4338 Vishay, 2N4338 Datasheet

Transistor

2N4338

Manufacturer Part Number
2N4338
Description
Transistor
Manufacturer
Vishay
Datasheets

Specifications of 2N4338

Breakdown Voltage Vbr
-50V
Gate-source Cutoff Voltage Vgs(off) Max
-1V
No. Of Pins
3
Continuous Drain Current Id
600µA
Gate-source Breakdown Voltage
-50V
Mounting Type
Through Hole
Channel Type
N
Configuration
Single
Gate-source Voltage (max)
-50V
Drain-gate Voltage (max)
-50V
Operating Temperature (min)
-55C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Rohs Compliant
No
Current Rating
50mA
Gate-source Cutoff Voltage
-1V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N4338
Manufacturer:
NSC
Quantity:
20
Part Number:
2N4338
Manufacturer:
ST
0
Part Number:
2N4338
Manufacturer:
SILICONIX
Quantity:
20 000
The 2N4338/4339/4340/4341 n-channel JFETs are designed
for sensitive amplifier stages at low- to mid-frequencies. Low
cut-off voltages accommodate low-level power supplies and
low leakage for improved system accuracy.
Gate-Source/Gate-Drain Voltage
Forward Gate Current
Storage Temperature
Operating Junction Temperature
For applications information see AN102 and AN106.
Document Number: 70240
S-04028—Rev. E, 04-Jun-01
D Low Cutoff Voltage: 2N4338 <1 V
D High Input Impedance
D Very Low Noise
D High Gain: A
Part Number
2N4338
2N4339
2N4340
2N4341
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
= 80 @ 20 mA
–0.6 to –1.8
GS(off)
–0.3 to –1
–1 to –3
–2 to –6
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(V)
V
(BR)GSS
–50
–50
–50
–50
Min (V)
D Full Performance from Low-Voltage
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Power Supply: Down to 1 V
Amplification
N-Channel JFETs
–65 to 200_C
–55 to 175_C
D
S
g
50 mA
fs
–50 V
1
2
Min (mS)
TO-206AA
0.6
0.8
1.3
Top View
(TO-18)
2
The TO-206AA (TO-18) package is hermetically sealed and
suitable for military processing (see Military Information). For
similar products in TO-226AA (TO-92) and TO-236 (SOT-23)
packages, see the J/SST201 series data sheet.
Lead Temperature (
Power Dissipation
Notes
a.
3
I
DSS
Derate 2 mW/_C above 25_C
G and Case
Max (mA)
0.6
1.5
3.6
9
a
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
/
2N4338/4339/4340/4341
16
” from case for 10 sec.)
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
D Infrared Detector Amplifiers
D Ultrahigh Input Impedance
Battery-Powered Amplifiers
Pre-Amplifiers
Vishay Siliconix
. . . . . . . . . . . . . . . . . . .
www.vishay.com
300 mW
300_C
7-1

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2N4338 Summary of contents

Page 1

... D Low Cutoff Voltage: 2N4338 < High Input Impedance D Very Low Noise D High Gain The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy ...

Page 2

... GS(off DSS – GSS T = 150_C 0 D(off GS( Limits 2N4338 2N4339 a Typ Min Max Min –57 –50 –50 –0.3 –1 –0.6 0.2 0.6 0.5 –2 –100 –4 –100 – 0.7 0.6 1.8 0.8 5 2500 Limits 2N4340 2N4341 a Typ Min Max Min –57 – ...

Page 3

... kHz ds(on iss MHz rss kHz kHz 100 0 –4 –5 0 2N4338/4339/4340/4341 Vishay Siliconix Limits 2N4340 2N4341 a Typ Min Max Min 1 1500 Gate Leakage Current I = 100 mA D 500 125_C 125_C GSS 500 100 25_C 25_C GSS – Drain-Gate Voltage (V) DG Max ...

Page 4

... Vishay Siliconix On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 1500 g os 1200 900 r DS 600 300 100 mA kHz –1 –2 V – Gate-Source Cutoff Voltage (V) GS(off) Output Characteristics 400 V = –0.7 V GS(off) 320 240 160 80 –0 – Drain-Source Voltage (V) DS Output Characteristics ...

Page 5

... Transconductance vs. Gate-Source Voltage kHz 3.2 2.4 1.6 0.8 0 –0.4 –0.5 0 2000 1600 1200 800 = –0 400 0 1 0.01 2N4338/4339/4340/4341 Vishay Siliconix Transfer Characteristics = –1 GS(off –55_C A 25_C 125_C –0.4 –0.8 –1.2 –1.6 V – Gate-Source Voltage ( –1 GS(off kHz T = –55_C ...

Page 6

... Vishay Siliconix Common-Source Input Capacitance vs. Gate-Source Voltage MHz –4 –8 –12 V – Gate-Source Voltage (V) GS Output Conductance vs. Drain Current –1.5 V GS(off) 2.4 1.8 T 0.8 25_C 0.4 0 0.01 0.1 I – Drain Current (mA) D www.vishay.com 7 –16 – kHz –55_C 125_C 0 1 Common-Source Reverse Feedback Capacitance vs ...

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