2N4338 Vishay, 2N4338 Datasheet - Page 5

Transistor

2N4338

Manufacturer Part Number
2N4338
Description
Transistor
Manufacturer
Vishay
Datasheets

Specifications of 2N4338

Breakdown Voltage Vbr
-50V
Gate-source Cutoff Voltage Vgs(off) Max
-1V
No. Of Pins
3
Continuous Drain Current Id
600µA
Gate-source Breakdown Voltage
-50V
Mounting Type
Through Hole
Channel Type
N
Configuration
Single
Gate-source Voltage (max)
-50V
Drain-gate Voltage (max)
-50V
Operating Temperature (min)
-55C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Rohs Compliant
No
Current Rating
50mA
Gate-source Cutoff Voltage
-1V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N4338
Manufacturer:
NSC
Quantity:
20
Part Number:
2N4338
Manufacturer:
ST
0
Part Number:
2N4338
Manufacturer:
SILICONIX
Quantity:
20 000
Document Number: 70240
S-04028—Rev. E, 04-Jun-01
500
400
300
200
100
200
160
120
1.5
1.2
0.9
0.6
0.3
80
40
0
0
0
0
0
0.01
Transconductance vs. Gate-Source Voltage
V
V
Circuit Voltage Gain vs. Drain Current
Assume V
GS(off)
A
R
GS(off)
T
V
L
125_C
A
–0.1
–0.1
+
= –55_C
+
T
= –0.7 V
–1.5 V
A
= –0.7 V
1 ) R
V
V
Transfer Characteristics
10 V
= –55_C
GS
GS
I
125_C
g
D
DD
fs
I
– Gate-Source Voltage (V)
– Gate-Source Voltage (V)
D
R
= 15 V, V
– Drain Current (mA)
L
L
g
–0.2
–0.2
os
25_C
0.1
25_C
DS
= 5 V
V
–0.3
–0.3
GS(off
)
V
f = 1 kHz
= –0.7 V
V
DS
DS
= 10 V
–0.4
–0.4
= 10 V
–0.5
–0.5
_
1
2000
1600
1200
800
400
3.2
2.4
1.6
0.8
1.6
1.2
0.8
0.4
4
0
2
0
0
0
0
0.01
Transconductance vs. Gate-Source Voltage
V
V
125_C
GS(off)
T
GS(off)
T
A
A
V
T
125_C
On-Resistance vs. Drain Current
= 25_C
A
–0.4
–0.4
GS(off)
= –55_C
= –55_C
= –1.5 V
= –1.5 V
V
V
2N4338/4339/4340/4341
Transfer Characteristics
GS
GS
25_C
= –0.7 V
I
– Gate-Source Voltage (V)
– Gate-Source Voltage (V)
D
– Drain Current (mA)
25_C
–0.8
–0.8
–1.5 V
0.1
–1.2
–1.2
Vishay Siliconix
V
V
f = 1 kHz
DS
DS
= 10 V
= 10 V
–1.6
–1.6
www.vishay.com
–2
–2
1
7-5

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