2N5114-E3 Vishay, 2N5114-E3 Datasheet - Page 3
![P CHANNEL JFET, 45V, TO-206AA](/photos/22/14/221408/4472333_sml.jpg)
2N5114-E3
Manufacturer Part Number
2N5114-E3
Description
P CHANNEL JFET, 45V, TO-206AA
Manufacturer
Vishay
Specifications of 2N5114-E3
Breakdown Voltage Vbr
45V
Gate-source Cutoff Voltage Vgs(off) Max
10V
Power Dissipation Pd
500mW
Operating Temperature Range
-55°C To +200°C
No. Of Pins
3
Transistor Polarity
P Channel
Channel Type
P
Configuration
Single
Gate-source Voltage (max)
30V
Drain-gate Voltage (max)
30V
Operating Temperature (min)
-55C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Continuous Drain Current Id
-90mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes
a.
b.
c.
Document Number: 70240
S-40990—Rev. F, 24-May-04
SPECIFICATIONS FOR 2N4340 AND 2N4341 (T
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
Noise Figure
TYPICAL CHARACTERISTICS (T
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v300 ms, duty cycle v3%.
This parameter not registered with JEDEC.
10
8
6
4
2
0
0
Parameter
I
g
f = 1 kHz
DSS
Drain Current and Transconductance
fs
@ V
V
@ V
vs. Gate-Source Cutoff Voltage
GS(off)
−1
DS
DS
g
= 10 V, V
− Gate-Source Cutoff Voltage (V)
= 10 V, V
fs
c
−2
GS
GS
= 0 V
= 0 V
−3
Symbol
I
r
DSS
ds(on)
C
C
g
NF
g
e
os
rss
iss
fs
n
−4
A
= 25_C UNLESS OTHERWISE NOTED)
−5
V
V
V
V
V
V
DS
DS
DS
DS
DS
DS
5
4
3
2
1
0
= 15 V V
= 15 V, V
= 15 V V
= 15 V, V
= 10 V, V
V
Test Conditions
= 0 V, V
f = 1 kHz, R
DS
= 15 V, V
GS
GS
GS
GS
GS
GS
A
= 0 V, f = 1 kHz
= 0 V f = 1 MHz
= 0 V, f = 1 MHz
= 0 V, f = 1 kHz
= 0 V f = 1 kHz
= 0 V, f = 1 kHz
G
100 pA
= 25_C UNLESS OTHERWISE NOTED)
0.1 pA
GS
10 nA
10 pA
= 1 MW
1 nA
1 pA
= 0 V
0
T
T
A
A
= 125_C
= 25_C
6
2N4338/4339/4340/4341
V
Gate Leakage Current
DG
Typ
1.5
− Drain-Gate Voltage (V)
5
6
I
D
a
I
12
= 100 mA
GSS
Min
@ 125_C
1.3
500 mA
2N4340
18
Max
1500
Vishay Siliconix
500 mA
30
I
3
7
3
1
GSS
Limits
I
D
= 100 mA
@ 25_C
24
Min
2
2N4341
Max
www.vishay.com
800
60
30
4
7
3
1
Unit
√Hz
mS
nV⁄
mS
pF
pF
dB
W
NPA
3