2N5114-E3 Vishay, 2N5114-E3 Datasheet - Page 4

• Manufacturer Part Number: 2N5114-E3
• Description: P CHANNEL JFET, 45V, TO-206AA
• Manufacturer: Vishay

Specifications of 2N5114-E3

• Breakdown Voltage Vbr: 45V
• Gate-source Cutoff Voltage Vgs(off) Max: 10V
• Power Dissipation Pd: 500mW
• Operating Temperature Range: -55°C To +200°C
• No. Of Pins: 3
• Transistor Polarity: P Channel
• Channel Type: P
• Configuration: Single
• Gate-source Voltage (max): 30V
• Drain-gate Voltage (max): 30V
• Operating Temperature (min): -55C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Continuous Drain Current Id: -90mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2N4338/4339/4340/4341
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (T
1500
1200
900
600
300
400
320
240
160
300
240
180
120
80
60
0
0
0
0
0
0
On-Resistance and Output Conductance
V
GS(off)
V
V
r
g
DS
vs. Gate-Source Cutoff Voltage
GS(off)
os
GS(off)
0.1
−1
4
= −0.7 V
r
@ I
@ V
DS
V
V
DS
DS
Output Characteristics
Output Characteristics
= −0.7 V
D
− Gate-Source Cutoff Voltage (V)
DS
− Drain-Source Voltage (V)
− Drain-Source Voltage (V)
= 100 mA, V
= 10 V, V
0.2
−2
8
GS
GS
V
= 0 V, f = 1 kHz
−0.5 V
g
GS
= 0 V
os
12
−3
0.3
= 0 V
V
A
GS
−4
16
−0.1 V
−0.2 V
−0.3 V
−0.4 V
−0.5 V
0.4
= 25_C UNLESS OTHERWISE NOTED)
−0.1 V
−0.2 V
−0.3 V
−0.4 V
= 0 V
0.5
20
−5
10
8
6
4
2
0
1.6
1.2
0.8
0.4
1.6
1.2
0.8
0.4
0.8
0.6
0.4
0.2
2
0
2
0
1
0
0
0.01
Common-Source Forward Transconductance
0
V
V
GS(off)
GS(off)
V
GS(off)
0.2
= −1.5 V
4
= −1.5 V
V
V
DS
DS
Output Characteristics
Output Characteristics
V
= −1.5 V
GS
I
− Drain-Source Voltage (V)
− Drain-Source Voltage (V)
D
vs. Drain Current
25_C
− Drain Current (mA)
= 0 V
0.4
8
−1.2 V
0.1
T
125_C
A
12
0.6
= −55_C
V
f = 1 kHz
DS
S-40990—Rev. F, 24-May-04
Document Number: 70240
= 10 V
V
GS
16
−0.3 V
−0.6 V
−0.9 V
−1.2 V
0.8
−0.3 V
−0.6 V
−0.9 V
= 0 V
1.0
20
1