SI3590DV-T1-GE3 Vishay, SI3590DV-T1-GE3 Datasheet - Page 4
![DUAL N/P CH MOSFET, 30V, 2A, TSOP](/photos/18/99/189973/4243386_sml.jpg)
SI3590DV-T1-GE3
Manufacturer Part Number
SI3590DV-T1-GE3
Description
DUAL N/P CH MOSFET, 30V, 2A, TSOP
Manufacturer
Vishay
Datasheet
1.SI3590DV-T1-E3.pdf
(9 pages)
Specifications of SI3590DV-T1-GE3
Transistor Polarity
N And P Channel
Continuous Drain Current Id
2A
Drain Source Voltage Vds
30V
Threshold Voltage Vgs Typ
1.5V
Power Dissipation Pd
830mW
Module Configuration
Dual
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI3590DV-T1-GE3
Manufacturer:
VISHAY
Quantity:
36 000
Part Number:
SI3590DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si3590DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
0.1
10
1
- 50
0.00
- 25
Source-Drain Diode Forward Voltage
T
J
V
= 150 °C
0.3
SD
0
- Source-to-Drain Voltage (V)
T
I
D
Threshold Voltage
J
= 250 µA
- T emperature (°C)
2 5
0.6
5 0
0.9
7 5
T
J
= 25 °C
0.01
100
0.1
100
10
1
0.1
1.2
* V
125
Limited by R
Safe Operating Area, Junction-to-Case
GS
Limited
I
D( on)
> minimum V
150
1.5
V
DS -
Single Pulse
T
DS(on)
C
Drain-to-Source Voltage (V)
1
= 25 °C
GS
*
BV
at which R
DS S
Limited
I
DM
DS(on)
1 0
Limited
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
0.01
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10 s, 1 s
100 µs
1 ms
10 ms
100 ms
DC
I
D
1
V
100
= 3 A
GS
0.1
- Gate-to-Source Voltage (V)
Time (s)
2
S09-1927-Rev. C, 28-Sep-09
Document Number: 72032
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