SI3590DV-T1-GE3 Vishay, SI3590DV-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI3590DV-T1-GE3
• Description: DUAL N/P CH MOSFET, 30V, 2A, TSOP
• Manufacturer: Vishay

Specifications of SI3590DV-T1-GE3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 30V
• Threshold Voltage Vgs Typ: 1.5V
• Power Dissipation Pd: 830mW
• Module Configuration: Dual
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si3590DV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
0.1
10
1
- 50
0.00
- 25
Source-Drain Diode Forward Voltage
T
J
V
= 150 °C
0.3
SD
0
- Source-to-Drain Voltage (V)
T
I
D
Threshold Voltage
J
= 250 µA
- T emperature (°C)
2 5
0.6
5 0
0.9
7 5
T
J
= 25 °C
0.01
100
0.1
100
10
1
0.1
1.2
* V
125
Limited by R
Safe Operating Area, Junction-to-Case
GS
Limited
I
D( on)
> minimum V
150
1.5
V
DS -
Single Pulse
T
DS(on)
C
Drain-to-Source Voltage (V)
1
= 25 °C
GS
*
BV
at which R
DS S
Limited
I
DM
DS(on)
1 0
Limited
0.25
0.20
0.15
0.10
0.05
0.00
8
6
4
2
0
0.01
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10 s, 1 s
100 µs
1 ms
10 ms
100 ms
DC
I
D
1
V
100
= 3 A
GS
0.1
- Gate-to-Source Voltage (V)
Time (s)
2
S09-1927-Rev. C, 28-Sep-09
Document Number: 72032
1
3
4
10
30
5