SI3590DV-T1-GE3 Vishay, SI3590DV-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI3590DV-T1-GE3
• Description: DUAL N/P CH MOSFET, 30V, 2A, TSOP
• Manufacturer: Vishay

Specifications of SI3590DV-T1-GE3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 30V
• Threshold Voltage Vgs Typ: 1.5V
• Power Dissipation Pd: 830mW
• Module Configuration: Dual
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72032
S09-1927-Rev. C, 28-Sep-09
0.01
0.1
0.01
2
1
0.1
10
2
1
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square W ave Pulse Duration (s)
10
-2
10
-1
10
1
-1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
1 0
Notes:
P
DM
JM
- T
1
A
t
1
= P
t
2
DM
Vishay Siliconix
Z
th J A
th J A
100
t
t
(t )
1
2
Si3590DV
= 87 °C/W
www.vishay.com
600
1
0
5