SI5513DC-T1-E3 Vishay, SI5513DC-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI5513DC-T1-E3
• Description: DUAL N/P CHANNEL MOSFET, 20V, 1206
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5513DC-T1-E3

• Module Configuration: Dual
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 4.2A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Minimum Operating Temperature: - 55 C
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.075 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.1 A @ N Channel or 2.1 A @ P Channel
• Power Dissipation: 1100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5513DC-T1-E3TR

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71186
S10-0547-Rev. G, 08-Mar-10
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
0.01
0.0
0.1
0
2
1
10
V
GS
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
V
0.5
= 5 V thru 4 V
On-Resistance vs. Drain Current
GS
2
V
Single Pulse
= 2.5 V
DS
Output Characteristics
- Drain-to-Source Voltage (V)
1.0
I
D
- Drain Current (A)
4
1.5
10
V
GS
-3
6
= 3.6 V
Normalized Thermal Transient Impedance, Junction-to-Foot
2.0
3.5 V
2.5 V
1.5 V
V
3 V
2 V
GS
8
2.5
= 4.5 V
3.0
Square Wave Pulse Duration (s)
10
10
-2
600
500
400
300
200
100
10
10
8
6
4
2
0
0
-1
0.0
0
C
rss
0.5
4
V
V
1.0
GS
Transfer Characteristics
DS
C
C
oss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
iss
1.5
Capacitance
8
1
2.0
Vishay Siliconix
T
25 °C
C
12
= - 55 °C
2.5
Si5513DC
www.vishay.com
3.0
16
125 °C
3.5
10
4.0
20
5