SI4920DY-T1-GE3 Vishay, SI4920DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4920DY-T1-GE3
• Description: DUAL N CHANNEL MOSFET, 30V, 6.9A
• Manufacturer: Vishay

Specifications of SI4920DY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6.9A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 25mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4920DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70667.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.0
0.4
0.2
10
0.01
40
30
20
1
0.1
- 50
0
2
1
10
-4
Source-Drain Diode Forward Voltage
- 25
0.2
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
V
SD
T
0
J
- Source-to-Drain Voltage (V)
0.4
= 150 °C
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
10
I
D
50
-3
= 250 µA
Single Pulse
0.8
Normalized Thermal Transient Impedance, Junction-to-Ambient
T
75
J
= 25 °C
1.0
100
1.2
125
10
-2
Square Wave Pulse Duration (s)
1.4
150
10
-1
0.10
0.08
0.06
0.04
0.02
30
25
20
15
10
0
5
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
I
D
= 6.9 A
2
V
GS
0.10
1
Single Pulse
Single Pulse Power
T
- Gate-to-Source Voltage (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
C
P
DM
= 25 °C
JM
4
Time (s)
- T
t
A
1
S09-0767-Rev. E, 04-May-09
= P
t
2
Document Number: 70667
1.00
DM
Z
6
thJA
thJA
t
t
1
2
(t)
= 62.5 °C/W
10
8
10.00
30
10