SI4920DY-T1 Vishay, SI4920DY-T1 Datasheet
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SI4920DY-T1
Manufacturer Part Number
SI4920DY-T1
Description
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,6.9A I(D),SO
Manufacturer
Vishay
Datasheet
1.SI4920DY-T1.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4920DY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4920DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4920DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70667
S-52637—Rev. D, 02-Jan-06
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t v 10 sec.
DS
30
30
Ordering Information: Si4920DY–T1
(V)
G
G
S
S
1
1
2
2
1
2
3
4
J
J
a
a
0.035 at V
0.025 at V
= 150 _C)
= 150 _C)
a
Top View
Si4920DY–T1–E3 (Lead (Pb)–free)
SO-8
r
DS(on)
Dual N-Channel 30-V (D-S) MOSFET
Parameter
Parameter
GS
GS
a
a
(W)
= 4.5 V
= 10 V
8
7
6
5
a
D
D
D
D
1
1
2
2
I
D
"6.9
"5.8
(A)
_
T
T
T
T
A
A
A
A
= 25 _C
= 70 _C
= 25 _C
= 70 _C
G
1
N-Channel MOSFET
Symbol
Symbol
D TrenchFETr Power MOSFETs
D 100 % Rg tested
T
R
J
V
V
I
P
P
, T
thJA
DM
I
I
I
GS
DS
D
D
S
D
D
stg
D
S
1
1
– 55 to 150
G
Limit
Limit
Vishay Siliconix
2
"6.9
" 5.5
" 20
" 40
62.5
1.7
1.3
30
2
N-Channel MOSFET
Si4920DY
D
S
2
2
www.vishay.com
Unit
Unit
_C/W
_C
W
W
V
V
A
A
2-1
*